MX25U4035
MX25U8035
ERASE AND PROGRAMMING PERFORMANCE
PARAMETER
Min.
TYP. (1)
Max. (2)
200
220
1.6
3
UNIT
Write Status Register Cycle Time
Sector Erase Cycle Time (4KB)
Block Erase Cycle Time (32KB)
Block Erase Cycle Time (64KB)
ns
ms
s
90
0.8
1.5
s
4M
8M
7.5
13
s
Chip Erase Cycle Time
15
25
s
Byte Program Time (via page program command)
Page Program Cycle Time
30
300
7
us
ms
cycles
2
Erase/Program Cycle
100,000
Note:
1. Typical program and erase time assumes the following conditions: 25 C, 1.8V, and checker board pattern.
°
2. Under worst conditions of 85 C and 1.65V.
°
3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming com-
mand.
4. The maximum chip programming time is evaluated under the worst conditions of 0C, VCC=1.8V, and 100K cycle
with 90% confidence level.
LATCH-UP CHARACTERISTICS
MIN.
-1.0V
MAX.
Input Voltage with respect to GND on all power pins, SI, CS#
Input Voltage with respect to GND on SO
2 VCCmax
VCC + 1.0V
+100mA
-1.0V
Current
-100mA
Includes all pins except VCC. Test conditions: VCC = 1.8V, one pin at a time.
P/N: PM1394
REV. 1.0, MAR. 09, 2009
48
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