MX25L3205A
ERASE AND PROGRAMMING PERFORMANCE
PARAMETER
Min.
TYP. (1) Max.(2) UNIT
Comments
Chip Erase Time
64
51
128
103
s
s
Chip Erase Time
Note(4)
(withACC=12V)
Sector erase Time
Sector erase Time
(withACC=12V)
1
3
s
s
Note(4)
Note(4)
0.8
2.4
Additional 4Kb Erase Time
PageProgrammingTime
25
3
50
12
mS
mS
Note(4)
Excludes system level
overhead(3)
PageProgrammingTime
(withACC=12V)
2.4
9.6
mS
Erase/Program
Cycle
Main Array
Additional4Kb
10K
cycles
cycles
100K
Note:
1. Typicalprogramanderasetimeassumesthefollowingconditions:25°C,3.0V,andallbitsareprogrammedbychecker-
boardpattern.
2. Under worst conditions of 70°C and 3.0V. Maximum values are up to including 10K program/erase cycles.
3. System-level overhead is the time required to execute the command sequences for the page program command.
4. Excludes00Hprogrammingpriortoerasure.(Inthepre-programmingstepoftheembeddederasealgorithm,allbitsare
programmedto00Hbeforeerasure)
LATCH-UP CHARACTERISTICS
MIN.
-1.0V
MAX.
12.5V
Input Voltage with respect to GND on ACC
Input Voltage with respect to GND on all power pins, SI, CS#
Input Voltage with respect to GND on SO
-1.0V
2 VCCmax
VCC + 1.0V
+100mA
-1.0V
Current
-100mA
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
P/N:PM1243
REV. 1.2, NOV. 06, 2006
40
Macronix [ MACRONIX INTERNATIONAL ]
