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MX25L1635DMI-12G 参数 Datasheet PDF下载

MX25L1635DMI-12G图片预览
型号: MX25L1635DMI-12G
PDF下载: 下载PDF文件 查看货源
内容描述: 16M - BIT [ ×1 / ×2 / ×4 ] CMOS串行闪存 [16M-BIT [x 1/x 2/x 4] CMOS SERIAL FLASH]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 50 页 / 728 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX25L1635D  
(17) Release from Deep Power-down (RDP), Read Electronic Signature (RES) .................................................22  
(18) Read Electronic Manufacturer ID & Device ID (REMS), (REMS2), (REMS4) .............................................22  
Table 7.ID Definitions.......................................................................................................................................23  
(19) Enter Secured OTP (ENSO)......................................................................................................................23  
(20) Exit Secured OTP (EXSO) ........................................................................................................................23  
(21) Read Security Register (RDSCUR) ...........................................................................................................23  
(22) Write Security Register (WRSCUR) ...........................................................................................................24  
Table 8.Security Register Definition .................................................................................................................24  
POWER-ON STATE ...................................................................................................................................................25  
ELECTRICAL SPECIFICATIONS ..............................................................................................................................26  
Figure 2.Maximum Negative Overshoot Waveform............................................................................................26  
ABSOLUTE MAXIMUM RATINGS ...................................................................................................................26  
CAPACITANCE TA = 25° C, f = 1.0 MHz ...........................................................................................................26  
Figure 3. Maximum Positive Overshoot Waveform ............................................................................................26  
Figure 5. OUTPUT LOADING..........................................................................................................................27  
Figure 4.INPUTTEST WAVEFORMS AND MEASUREMENT LEVEL .............................................................27  
Table 9.DC CHARACTERISTICS (Temperature = -40° C to 85°C for Industrial grade,VCC = 2.7V ~ 3.6V)........28  
Table 10.AC CHARACTERISTICS (Temperature = -40° C to 85° C for Industrial grade, VCC = 2.7V ~ 3.6V) ....29  
Figure 6. Serial Input Timing.............................................................................................................................30  
Figure 7.OutputTiming ....................................................................................................................................30  
Timing Analysis .......................................................................................................................................................30  
Figure 8.WP# SetupTiming and HoldTiming during WRSR when SRWD=1 .....................................................31  
Figure 9.Write Enable (WREN) Sequence (Command 06) ................................................................................31  
Figure 10.Write Disable (WRDI) Sequence (Command 04) ...............................................................................31  
Figure 11.Read Identification (RDID) Sequence (Command 9F) .......................................................................32  
Figure 12.Read Status Register (RDSR) Sequence (Command 05) .................................................................32  
Figure 13.Write Status Register (WRSR) Sequence (Command 01) ................................................................32  
Figure 14.Read Data Bytes (READ) Sequence (Command 03) .......................................................................33  
Figure 15.Read at Higher Speed (FAST_READ) Sequence (Command 0B) ....................................................33  
Figure 16.2 x I/O Read Mode Sequence (Command BB) .................................................................................34  
Figure 17.4 x I/O Read Mode Sequence (Command EB) .................................................................................34  
Figure 18.4 x I/O Read enhance performance Mode Sequence (Command EB) ...............................................35  
Figure 19.Page Program (PP) Sequence (Command 02).................................................................................36  
Figure 20.4 x I/O Page Program (4PP) Sequence (Command 38) ...................................................................36  
Figure 21.Continously Program (CP) Mode Sequence with Hardware Detection (Command AD) .......................37  
Figure 22. Sector Erase (SE) Sequence (Command 20) ..................................................................................37  
Figure 23.Block Erase (BE) Sequence (Command D8) ...................................................................................37  
Figure 24.Chip Erase (CE) Sequence (Command 60 or C7) ............................................................................38  
Figure 25.Deep Power-down (DP) Sequence (Command B9) ..........................................................................38  
P/N:PM1374  
REV. 1.5, OCT. 01, 2008  
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