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28LV011RPFB-25 参数 Datasheet PDF下载

28LV011RPFB-25图片预览
型号: 28LV011RPFB-25
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3V 1兆位( 128K ×8位) EEPROM [3.3V 1 Megabit (128K x 8-Bit) EEPROM]
分类和应用: 存储内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 19 页 / 305 K
品牌: MAXWELL [ MAXWELL TECHNOLOGIES ]
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28LV011  
3.3V 1 Megabit (128K x 8-Bit) EEPROM  
RDY/Busy Signal  
RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal  
has high impedance except in write cycle and is lowered to V after the first write signal. At the-end of a write cycle,  
OL  
the RDY/Busy signal changes state to high impedance.  
RES Signal  
When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping  
RES low when V is switched. RES should be high during read and programming because it doesnt provide a latch  
CC  
function.  
Data Protection  
To protect the data during operation and power on/off, the EEPROM has the internal functions described below.  
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.  
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mis-  
take. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20 ns or less in  
programming mode. Be careful not to allow noise of a width of more than 20 ns on the control pins.  
2. Data Protection at VCC on/off  
05.28.02 Rev 2  
All data sheets are subject to change without notice 15  
©2002 Maxwell Technologies  
All rights reserved.