28LV011
3.3V 1 Megabit (128K x 8-Bit) EEPROM
FIGURE 11. SEU SATURATED CROSS SECTION VALUES IN WRITE MODE
28LV010 WRITE MODE AVERAGE CROS S-S ECTION
1.00E-01
1.00E-02
1.00E-03
1.00E-04
1.00E-05
1.00E-06
SL1
SL2
SL3
N4
N5
0
10
20
30
40
50
60
70
80
90
LET [MeV-cm^2/mg]
EEPROM APPLICATION NOTES
This application note describes the programming procedures for the EEPROM modules and with details of various
techniques to preserve data protection.
Automatic Page Write
Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and
allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading
the first byte of data, the data load window opens 30 µs for the second byte. In the same manner each additional byte
of data can be loaded within 30 µs. In case CE and WE are kept high for 100s after data input, EEPROM enters erase
and write mode automatically and only the input data are written into the EEPROM.
WE CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of
WE or CE.
Data Polling
Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a
write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is per-
forming a write operation.
05.28.02 Rev 2
All data sheets are subject to change without notice 14
©2002 Maxwell Technologies
All rights reserved.
MAXWELL [ MAXWELL TECHNOLOGIES ]
