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MAX845ESA 参数 Datasheet PDF下载

MAX845ESA图片预览
型号: MAX845ESA
PDF下载: 下载PDF文件 查看货源
内容描述: 适用于PCMCIA隔离变压器驱动器 [Isolated Transformer Driver for PCMCIA Applications]
分类和应用: 变压器驱动器PC
文件页数/大小: 16 页 / 215 K
品牌: MAXIM [ MAXIM INTEGRATED PRODUCTS ]
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Is o la t e d Tra n s fo rm e r Drive r  
fo r P CMCIA Ap p lic a t io n s  
MAX845  
2) Use a test winding to measure ET product (if using  
an ungapped toroid) and/or A value for the core.  
L
V
IN  
6
1
3) Determine the number of turns required for the pri-  
mary winding. For an ungapped toroid, ET product  
from center-tap to D1 must be at least 5V-µs. Other  
core types must have sufficient inductance to limit  
D1 and D2 output current under minimum load con-  
ditions, and must not be allowed to saturate.  
V
CC  
D1  
MAX845  
8
D2  
GND1 GND2  
2
7
4) Select a rectifier topology based on performance  
requirements (ripple vs. loss, and space required  
for secondary winding). Refer to Table 2, Rectifier  
Topology Trade-Offs.  
Figure 11a. 2-Diode Push-Pull  
5) Work backward from V  
requirements to deter-  
OUT  
V
IN  
mine the secondary to primary turns ratio. Include  
losses in the rectifier diodes, and estimate resistive  
losses in the windings. For load currents exceed-  
ing 150mA, use a voltage step-down transformer to  
step up the output current from the MAX845. Do  
not exceed the MAX845s absolute maximum out-  
put current rating (200mA).  
6
1
8
V
CC  
D1  
D2  
MAX845  
GND1 GND2  
2
7
6) Wind the transformer with the largest diameter wire  
that will fit the winding area. Select a wire gauge to  
fill the wind ing a p e rture a s muc h a s p os s ib le .  
Larger diameter wire has lower resistance per unit  
length. Doubling the wire diameter reduces resis-  
tive losses by a factor of four.  
Figure 11b. 4-Diode Bridge  
V
IN  
6
1
8
V
CC  
Bobbin or drum cores suffer from low coupling between  
windings. This usually requires bifilar winding for the  
two halves of the primary.  
D1  
D2  
MAX845  
Due to the inhe re nt c omp le xity of ma g ne tic c irc uit  
design, it will be necessary to build a prototype and re-  
iterate the design. If necessary, adjust the design by  
altering the number of primary or secondary turns, or the  
wire gauge. If using a different core material or geome-  
GND1 GND2  
2
7
try, evaluate its ET product or A as described above.  
L
Figure 11c. Voltage Doubler  
Re c t ifie r To p o lo g y  
Figure 11 shows various rectifier topologies. Refer to  
Table 2 for selection criteria. The turns ratio of the trans-  
former must be set to provide the minimum required out-  
put voltage at the maximum anticipated load, with the  
minimum expected input voltage. In addition, the calcu-  
lations should allow for worst-case losses in the recti-  
fiers. Since the turns ratio determined in this manner will  
ordinarily produce a much higher voltage at the sec-  
ondary under conditions of high input voltage and/or  
light loading, be careful to prevent an overvoltage con-  
dition from occurring (see the Output Voltage vs. Load  
Current graph in the Typical Operating Characteristics).  
Dio d e s  
Use fast-switching diode rectifiers. Ordinary silicon sig-  
nal diodes like the 1N914 or 1N4148 may be used for  
low output current levels (less than 50mA), but Schottky  
diodes have a lower forward voltage drop and should  
b e us e d for hig he r-c urre nt a p p lic a tions . Ce ntra l  
Semiconductor has low-current Schottky diodes as  
d ua ls in SOT-23 p a c ka g e s (CMPSH-3 s e rie s ). The  
Nihon SB05W05C is a common-cathode dual in a SOT-  
23; it works well in the two-diode full-wave configura-  
tion. The Motorola MBR0520 is an excellent choice for  
all configurations.  
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