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MAX668EUB 参数 Datasheet PDF下载

MAX668EUB图片预览
型号: MAX668EUB
PDF下载: 下载PDF文件 查看货源
内容描述: 1.8V至28V输入, PWM升压型控制器,μMAX封装 [1.8V to 28V Input, PWM Step-Up Controllers in レMAX]
分类和应用: 控制器
文件页数/大小: 18 页 / 290 K
品牌: MAXIM [ MAXIM INTEGRATED PRODUCTS ]
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1.8V to 28V Input, PWM Step-Up  
Controllers in µMAX  
given output ripple. An inductance value larger than  
may also be used, but output-filter capacitance  
old NFETs that specify on-resistance with a gate-  
L
source voltage (V ) of 2.7V or less. When selecting an  
GS  
IDEAL  
must be increased by the same proportion that L has to  
NFET, key parameters can include:  
L
. See the Capacitor Selection section for more  
IDEAL  
1) Total gate charge (Q )  
g
information on determining output filter values.  
2) Reverse transfer capacitance or charge (C  
)
RSS  
Due the MAX668/MAX669’s high switching frequencies,  
inductors with a ferrite core or equivalent are recom-  
mended. Powdered iron cores are not recommended  
due to their high losses at frequencies over 50kHz.  
3) On-resistance (R  
)
DS(ON)  
4) Maximum drain-to-source voltage (V  
)
DS(MAX)  
5) Minimum threshold voltage (V  
)
TH(MIN)  
At high switching rates, dynamic characteristics (para-  
meters 1 and 2 above) that predict switching losses  
Determining Peak Inductor Current  
The peak inductor current required for a particular out-  
put is:  
may have more impact on efficiency than R  
DS(ON),  
which predicts DC losses. Q includes all capacitances  
g
I
= I  
+ (I  
/ 2)  
LPEAK  
LDC  
LPP  
associated with charging the gate. In addition, this  
parameter helps predict the current needed to drive the  
gate at the selected operating frequency. The continu-  
ous LDO current for the FET gate is:  
where I  
is the average DC input current and I  
is  
LDC  
LPP  
and  
the inductor peak-to-peak ripple current. The I  
LDC  
8/MAX69  
I
terms are determined as follows:  
LPP  
I
(V  
+ V )  
OUT OUT D  
I
= Q x f  
g OSC  
GATE  
I
=
LDC  
(V – V  
)
IN  
SW  
For example, the MMFT3055L has a typical Q of 7nC  
g
(at V = 5V); therefore, the I  
current at 500kHz is  
3.5mA. Use the FET manufacturer’s typical value for Q  
GS  
GATE  
where V is the forward voltage drop across the  
D
g
Schottky rectifier diode (D1), and V  
across the external FET, when on.  
is the drop  
SW  
in the above equation, since a maximum value (if sup-  
plied) is usually too conservative to be of use in esti-  
mating I  
.
(V – V ) (V  
+ V – V )  
GATE  
IN  
SW  
OUT  
(V  
D
IN  
I
=
LPP  
L x f  
+ V )  
Diode Selection  
OSC  
OUT  
D
where L is the inductor value. The saturation rating of  
The MAX668/MAX669’s high switching frequency  
demands a high-speed rectifier. Schottky diodes are  
recommended for most applications because of their  
fast recovery time and low forward voltage. Ensure that  
the diode’s average current rating is adequate using  
the diode manufacturer’s data, or approximate it with  
the following formula:  
the selected inductor should meet or exceed the calcu-  
lated value for I , although most coil types can be  
LPEAK  
operated up to 20% over their saturation rating without  
difficulty. In addition to the saturation criteria, the induc-  
tor should have as low a series resistance as possible.  
For continuous inductor current, the power loss in the  
inductor resistance, P , is approximated by:  
LR  
I
- I  
LPEAK  
OUT  
I
= I  
+
2
P
LR  
(I  
x V  
/ V ) x R  
DIODE  
OUT  
OUT  
OUT  
IN  
L
3
where R is the inductor series resistance.  
L
Also, the diode reverse breakdown voltage must  
exceed V . For high output voltages (50V or above),  
Once the peak inductor current is selected, the current-  
sense resistor (R ) is determined by:  
OUT  
CS  
Schottky diodes may not be practical because of this  
voltage requirement. In these cases, use a high-speed  
silicon rectifier with adequate reverse voltage.  
R
= 85mV / I  
LPEAK  
CS  
For high peak inductor currents (>1A), Kelvin sensing  
connections should be used to connect CS+ and  
Capacitor Selection  
PGND to R . PGND and GND should be tied together  
CS  
Output Filter Capacitor  
The minimum output filter capacitance that ensures sta-  
bility is:  
at the ground side of R  
.
CS  
Power MOSFET Selection  
The MAX668/MAX669 drive a wide variety of N-channel  
power MOSFETs (NFETs). Since LDO limits the EXT  
output gate drive to no more than 5V, a logic-level  
NFET is required. Best performance, especially at low  
input voltages (below 5V), is achieved with low-thresh-  
(7.5V x L / L  
)
IDEAL  
x f  
C
=
OUT(MIN)  
(2πR  
x V  
)
OSC  
CS  
IN(MIN)  
where V  
is the minimum expected input voltage.  
OUT(MIN)  
IN(MIN)  
Typically C  
, though sufficient for stability, will  
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