MAX1644EAE 参数 Datasheet PDF下载

II. Manufacturing Information

A. Description: 2A, Low-Voltage, Step-Down Regulator w/ Synchronous Rectification & Internal Switches

B. Process:

C. Number of Device Transistors:

D. Fabrication Location:

E. Assembly Location:

F. Date of Initial Production:

S12 (Standard 1.2 micron silicon gate CMOS)

1840

Oregon or California, USA

Philippines

June, 1999

III. Packaging Information

A. Package Type:

B. Lead Frame:

C. Lead Finish:

D. Die Attach:

E. Bondwire:

F. Mold Material:

G. Assembly Diagram:

H. Flammability Rating:

16-Lead SSOP

Copper

Solder Plate

Silver-filled Epoxy

Gold (2.0 mil dia.)

Epoxy with silica filler

Buildsheet # 05-1101-0105

Class UL94-V0

I. Classification of Moisture Sensitivity

per JEDEC standard JESD22-A112: Level 1

IV. Die Information

A. Dimensions:

B. Passivation:

C. Interconnect:

D. Backside Metallization:

E. Minimum Metal Width:

F. Minimum Metal Spacing:

G. Bondpad Dimensions:

H. Isolation Dielectric:

I. Die Separation Method:

121 x 132 mils

Si

3

N

4

/SiO

2

(Silicon nitride/ Silicon dioxide)

Aluminum/Si (Si = 1%)

None

1.2 microns (as drawn)

1.2 microns (as drawn)

5 mil. Sq.

SiO

2

Wafer Saw