TTL Compatible CMOS Analog Switches
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to V-
Operating Temperature (A suffix)......................-55°C to +125°C
(B suffix)........................-25°C to +85°C
(C suffix)...........................0°C to +70°C
Lead Temperature (soldering 10s) ..................................+300°C
Power Dissipation*
V+ (DG300–DG303)...............................................................36V
V+ (DG300A–DG303A)..........................................................44V
GND .......................................................................................25V
Digital Inputs, V , V , (Note 1).......................-4V to (V+ + 4V) or
S
D
Cerdip (K) (derate 11mW/°C above +75°C) ....................825mW
Plastic DIP (J) (derate 6.5mW/°C above +25°C) .............470mW
Metal Can (A) (derate 6mW/°C above +75°C).................450mW
30mA, whichever occurs first
Current, Any Terminal Except S or D..................................30mA
Continuous Current, S or D.................................................30mA
(pulsed at 1ms, 10% duty cycle max) ..........................100mA
Storage Temperature (A & B suffix)...................-65°C to +150°C
(C suffix).........................-65°C to +125°C
*Device mounted with all leads soldered or welded to PC board.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V+ = +15V, V- = -15V, GND = 0V, T = +25°C, unless otherwise noted.)
A
DG300–DG303A
DG300–DG303B/C
DG300A–DG303AA DG300A–DG303AB/C
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
(Note 2) (Note 3)
(Note 2) (Note 3)
Analog Signal Range
Drain-Source
ON-Resistance
V
I
= 10mA, V = 0.8V or 4.0V
-15
30
+15
50
50
1
-15
30
+15
50
50
5
V
ANALOG
S
IN
I
I
= -10mA, V = 10V
D
= -10mA, V = -10V
D
S
S
R
DS(ON)
S(OFF)
D(OFF)
30
0.1
30
0.1
V
V
V
V
V
V
= 14V, V = -14V
= -14V, V = 14V
D
= -14V, V = 14V
D
= 14V, V = -14V
D
Source OFF-
Leakage Current
S
D
I
nA
nA
nA
µA
µA
V
V
= 0.8V
or
= 0.8V
IN
IN
-1
-1
-0.1
0.1
-0.1
-5
-5
-0.1
0.1
-0.1
S
S
S
D
D
1
2
5
5
Drain OFF-
Leakage Current
Drain ON-
I
= V = 14V
S
0.1
0.1
I
D(ON)
Leakage Current
Input Current/
Voltage High
Input Current/
Voltage Low
Turn-ON Time
Turn-OFF Time
Break-Before-Make
Interval
Charge Injection
Source OFF-
Capacitance
Drain OFF-
= V = -14V
-2
-1
-0.1
-0.001
0.001
-5
-1
-0.1
-0.001
0.001
S
V
V
= 5.0V
= 15V
IN
IN
I
INH
1
1
I
V
= 0V
-1
-0.001
-1
-0.001
INL
IN
t
150
130
300
250
150
130
300
250
ns
ns
ON
See Switching Time Test Circuit
t
OFF
See Break-Before-Make Time Test
Circuit, DG301(A)/DG303(A) only
C = 10nF, R
t
- t
50
12
14
50
12
14
ns
pC
pF
ON OFF
= 0 , V
= 0V
L
GEN
GEN
Q
C
V
= 0V
S(OFF)
S
D
S
f = 1MHz,
V
= 0.8V
or
IN
C
V
V
= 0V
= VD = 0V
14
40
14
40
pF
pF
D(OFF)
Capacitance
Channel ON-
Capacitance
V
= 4.0V
C
C
+
IN
D(ON)
S(ON)
V
V
= 0V
= 15V
6
7
62
6
7
62
IN
IN
Input Capacitance
C
f = 1MHz
pF
dB
dB
IN
Off-Isolation (Note 4)
Crosstalk
(Channel-to-Channel)
V
V
= 0V, R = 1k
L
IN
= 1V
, f = 500kHz
74
74
S
RMS
2
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MAXIM [ MAXIM INTEGRATED PRODUCTS ]
