DA6512.003
2 December, 2016
EEPROM WRITE PROCEDURE
START
POWER UP DEVICE
Connect supply voltage VDD
INITIAL CONDITIONS
Reset device by XCLR or
by writing any data to the reset register E0/60HEX
ENABLE EEPROM WRITE
Write 04HEX to the EEPROM write enable register E9/69HEX
WRITE DATA TO EEPROM
Write data byte (8-bit) to selected EEPROM memory address
WAIT
Wait minimum 16ms after writing byte (8-bit) to EEPROM
VERIFY WRITTEN DATA
Read the written data byte (8-bit) from the EEPROM memory address
yes
Write more data?
no
DISABLE EEPROM WRITE
Write 00HEX to the EEPROM write enable register E9/69HEX
STOP
Figure 3. Flow chart for MAS6512 EEPROM write
Important note: Before EEPROM programming make sure that in the Test register (E1/61HEX) the SOSC=00 is
selected. That selects 200 kHz system clock frequency which is required for the proper EEPROM programming
pulses. This condition is guaranteed by making device reset either using the reset register (E0/60HEX) or the
XCLR pin.
Note: In the “VERIFY WRITTEN DATA” step it could be also additionally checked that the EEPROM status
register (EC/6CHEX) does not indicate read errors.
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