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MAS6510 参数 Datasheet PDF下载

MAS6510图片预览
型号: MAS6510
PDF下载: 下载PDF文件 查看货源
内容描述: [Capacitive Sensor Signal Interface IC]
分类和应用:
文件页数/大小: 32 页 / 800 K
品牌: MAS [ MICRO ANALOG SYSTEMS ]
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DA6510.009  
6 September, 2018  
INTERNAL CS AND CR CAPACITOR MATRIX REGISTERS (E3/63HEX AND E4/64HEX  
)
There are two internal capacitor matrices CS_INT and  
CR_INT that add capacitance in parallel to external  
sensor capacitor (CS_EXT) and external reference  
capacitor (CR_EXT) respectively. See application  
figure 9 on page 30. These offset capacitances are  
used to adjust the sensor signal to an optimal CDC  
input range. Each capacitor matrix has a selectable  
capacitance from 0pF up to 22pF in typical 86.3fF  
steps. The three sigma process variation of the  
capacitor matrix capacitance is ±10%.  
(E4/64HEX) value OCDACR. See table 5. It has also  
corresponding EEPROM address (C4/44HEX) as non-  
volatile storage of the trim value. The internal CS_INT  
and CR_INT capacitor matrix capacitance values  
depend on OCDACS and OCDACR register values  
according to equations 1-2.  
After finding suitable CS_INT and CR_INT capacitor  
matrix register values the trim values can be stored  
in the corresponding non-volatile EEPROM  
addresses.  
The CS_INT capacitor matrix is controlled by 8-bit  
register (E3/63HEX) value OCDACS. See table 4. It  
In normal operating mode these trim values are  
automatically read from the EEPROM during each  
conversion start. See also table 10 Trimming control  
Register (EE/6EHEX) for other operating modes.  
has a corresponding EEPROM address (C3/43HEX  
)
as non-volatile storage of the trim value. The CR_INT  
capacitor matrix is controlled by 8-bit register  
OCDACS  
CS _ INT = 22 pF   
CR _ INT = 22 pF   
Equation 1.  
Equation 2.  
255  
OCDACR  
255  
Table 4. CS_INT internal capacitor matrix register (E3/63HEX), EEPROM address (C3/43HEX  
)
Bit Number  
Bit Name  
Description  
Value  
Function  
7-0  
OCDACS  
CDAC control bits  
00HEXFFHEX CS_INT offset trimming  
Table 5. CR_INT internal capacitor matrix register (E4/64HEX), EEPROM address (C4/44HEX  
)
Bit Number  
Bit Name  
Description  
Value  
Function  
7-0  
OCDACR  
CDAC control bits  
00HEX…FFHEX CR_INT offset trimming  
GAIN REGISTER (E5/65HEX  
)
The 8-bit gain register (E5/65HEX) value (GRDAC)  
adjusts excitation signal level for the capacitive  
sensor. See table 6. Larger register value  
corresponds to smaller input changing capacitance  
range and vice versa. The gain register together with  
the CS_INT and the CR_INT capacitor matrix trim  
parameters define input capacitance range of  
measurement. Ideally the sensor signal is fit  
perfectly within the linear input capacitance range of  
the CDC. Such trimming maximizes resolution and  
dynamic range of the measurement.  
The gain register (E5/65HEX) has a corresponding  
EEPROM address (C5/45HEX  
)
as non-voltage  
storage of the trim value. After finding a suitable gain  
register value it can be stored in the non-volatile  
EEPROM memory. In normal operating mode the  
gain trim value is read automatically from the  
EEPROM during each conversion start.  
Table 6. Gain register (E5/65HEX), EEPROM address (C5/45HEX  
)
Bit Number  
Bit Name Description  
Value  
Function  
7-0  
GRDAC  
RDAC control bits 00HEX…FFHEX Gain adjustment by sensor excitation  
signal level control  
13 (32)