DA6505.005
11 June 2018
BLOCK DIAGRAM
TD
VDD
VDDIO
OSC
EEPROM
VDDS
REG
VREFP
GND
AFE
P
PI
SDI
T
SDO
ADC
CONTROL
P
NI
I2C/
SPI
SCK
CSB
T
VDDS
GNDS
VREFN
R3
R1
TEST
MUX
SDO
R4
R2
T
P
T
MAS6505
GND
Figure 1. MAS6505 block diagram
ABSOLUTE MAXIMUM RATINGS
All Voltages with Respect to Ground (GND)
Parameter
Symbol
Conditions
Min
Max
Unit
Supply Voltage
Serial Bus Voltage
Serial Bus Pins
VDD
-0.3
-0.3
-0.3
7.0
7.0
V
V
V
VDDIO
SDI, SDO, SCK, CSB
VDDIO + 0.3 or 7.0V
whichever is smaller
2.3V
Sensor Pins
VDDS, PI, NI, GNDS,
TD, Note 1.
-0.3
V
Latchup Current Limit
ILUT
For all pins, test
-100
+100
mA
according to JESD78A.
Junction Temperature
Storage Temperature
ESD Rating
TJmax
TS
+ 150
+125
°C
°C
V
Note 2
Note 3
Note 4
- 50
VHBM
VCDM
±2000
±500V
V
Note: The absolute maximum rating values are stress ratings only. Functional operation of the device at conditions between maximum operating
conditions and absolute maximum ratings is not implied and EEPROM contents may be corrupted. Exposure to these conditions for extended
periods may affect device reliability (e.g. hot carrier degradation, oxide breakdown). Applying conditions above absolute maximum ratings may
be destructive to the devices.
Note: This is a CMOS device and therefore it should be handled carefully to avoid any damage by static voltages (ESD).
Note 1: Voltage rating applies to TD pin when an external temperature sensing diode or test mode STEST=1001 is selected. In other operating
modes the TD pin voltage rating is 7.0V.
Note 2: See EEPROM memory data retention at hot temperature. Storage or bake at hot temperatures will reduce wafer level trimming and
calibration data retention time.
Note 3: JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process.
Note 4: JEDEC document JEP157 states that 250V CDM allows safe manufacturing with a standard ESD control process.
RECOMMENDED OPERATION CONDITIONS
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Supply Voltage
VDD
A/D conversions
EEPROM read
EEPROM write, Note 1
1.71
1.71
4.5
1.8
1.8
5.0
1.8
5.5
5.5
5.5
5.5
V
Serial Bus Voltage
VDDIO
1.2
V
Operating Temperature
TA
TA
-40
+25
+25
+90
+40
°C
°C
EEPROM Write
Temperature
Note 1
+10
Note 1: EEPROM write operation requires typical 5.0V supply voltage but EEPROM read operation has wide supply voltage range from 1.71V
to 5.5V. EEPROM write operation is recommended to be done at room temperature.
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MAS [ MICRO ANALOG SYSTEMS ]
