DA6503.005
14 December 2016
ABSOLUTE MAXIMUM RATINGS
All Voltages with Respect to Ground
Parameter
Symbol
Conditions
Min
Max
Unit
Supply Voltage
VDD
-0.3
-0.3
-100
5.0
V
V
Voltage Range for All Pins
Latchup Current Limit
VIN + 0.3
+100
ILUT
For all pins, test according to
JESD78A.
mA
Junction Temperature
Storage Temperature
TJmax
TS
+ 150
+125
°C
°C
Note 1
- 55
Note 1: See EEPROM memory data retention at hot temperature. Storage or bake at hot temperatures will reduce the wafer level trimming
and calibration data retention time.
Note: The absolute maximum rating values are stress ratings only. Functional operation of the device at conditions between maximum
operating conditions and absolute maximum ratings is not implied and EEPROM contents may be corrupted. Exposure to these conditions
for extended periods may affect device reliability (e.g. hot carrier degradation, oxide breakdown). Applying conditions above absolute
maximum ratings may be destructive to the devices.
Note: This is a CMOS device and therefore it should be handled carefully to avoid any damage by static voltages (ESD).
RECOMMENDED OPERATION CONDITIONS
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Supply Voltage
VDD
Without internal regulator
With internal regulator
1.8
VREG+0.1V
-40
2.7
3.6
3.6
+85
V
Operating Temperature
TA
TA
+25
+25
°C
°C
EEPROM Write
Temperature
Note 1
+10
+40
Note 1: EEPROM write operation is recommended to be done at room temperature
ELECTRICAL CHARACTERISTICS
TA = -40oC to +85oC, VDD = 2.7V, Typ TA = 27oC, Typ VDD = 2.7 V, RSENSOR = 4.5k unless otherwise noted
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Regulator Output
Voltage
VREG
VDD=VREG+0.1V
VREG=1.8V
-3.5%
-3.5%
-3.5%
-3.5%
1.8
2.2
2.6
2.9
0.01
+3.5%
+3.5%
+3.5%
+3.5%
0.1
V
VREG =2.2V
VREG =2.6V
VREG =2.9V
Standby current
ISTBY
All inputs at VDD, no load.
Note 1.
A
Conversion
Current
Consumption
IDD_CONV
Pressure mode, Reg ON (VREG =1.8V)
Temperature mode, Reg ON (VREG =1.8V)
Pressure mode, Reg OFF
Temperature mode, Reg OFF
VDD monitor mode, Reg OFF
VDD = 2.7 V, RSENSOR = 4.5 kΩ
760
600
710
560
760
1.39
1200
1000
1100
900
µA
1200
Peak Supply
Current During
Pressure
Measurement
Peak Supply
Current During
Temperature
Measurement
IPEAK_P
mA
mA
IPEAK_T
VDD = 2.7 V, RSENSOR = 4.5 kΩ
0.75
Note 1. Leakage current may increase if digital input voltages are not close to VDD (logic level high) or GND (logic level low). Also setting
XCS low activates the EEPROM memory regardless of the XSPI setting and the device consumes 20A …30A current. To minimize
current consumption XCS should be set low only during time periods when the device is used during SPI communication.
4 (34)
MAS [ MICRO ANALOG SYSTEMS ]
