DA6503.005
14 December 2016
EEPROM WRITE PROCEDURE
START
POWER UP DEVICE
Connect supply voltage VDD
INITIAL CONDITIONS
Reset device by XCLR or
by writing any data to the reset register E0/60HEX
ENABLE EEPROM WRITE
Write 04HEX to the EEPROM write enable register E6/66HEX
WRITE DATA TO EEPROM
Write data byte (8-bit) to selected EEPROM memory address
WAIT
Wait minimum 16ms after writing byte (8-bit) to EEPROM
VERIFY WRITTEN DATA
Read the written data byte (8-bit) from the EEPROM memory address
yes
Write more data?
no
DISABLE EEPROM WRITE
Write 00HEX to the EEPROM write enable register E6/66HEX
STOP
Figure 3. Flow chart for MAS6503 EEPROM write
Important note: Before EEPROM programming make sure that in the Test register (E1/61HEX) the ENVIV=0 and
in the Measurement control register 1 (E2/62HEX) the DIV=0 are selected. These select 250 kHz system clock
frequency which is required for the proper EEPROM programming pulses. This condition is guaranteed by
making device reset either using the reset register (E0/60HEX) or the XCLR pin.
Note: In the “VERIFY WRITTEN DATA” step it could be also additionally checked that the EEPROM status
register (EA/6AHEX) does not indicate read errors.
19 (34)
MAS [ MICRO ANALOG SYSTEMS ]
