MCP795WXX/MCP795BXX
1.0
ELECTRICAL CHARACTERISTICS
(†)
Absolute Maximum Ratings
VCC.............................................................................................................................................................................6.5V
All inputs and outputs w.r.t. VSS ................................................................................................................. -0.6V to +6.5V
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature under bias...............................................................................................................-40°C to +85°C
ESD protection on all pins..........................................................................................................................................4 kV
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
Industrial (I):
TAMB = -40°C to +85°C
VCC = 1.8V to 5.5V
DC CHARACTERISTICS
Param.
No.
Sym.
Characteristic
Min.
Max.
Units
Test Conditions
D001
VIH1
High-level input
voltage
.7 VCC
VCC+1
V
D002
D003
D004
D005
D006
VIL1
VIL2
VOL
VOL
VOH
Low-level input
voltage
-0.3
-0.3
0.3VCC
0.2VCC
0.4
V
V
V
V
V
VCC2.5V
VCC < 2.5V
Low-level output
voltage
—
IOL = 2.1 mA
—
0.2
IOL = 1.0 mA, VCC < 2.5V
IOH = -400 A
High-level output
voltage
VCC -0.5
—
D007
D008
ILI
Input leakage current
±1
±1
A
A
CS = VCC, VIN = VSS TO VCC
CS = VCC, VOUT = VSS TO VCC
ILO
Output leakage
current
D009
CINT
Internal Capacitance
(all inputs and
outputs)
—
—
7
3
pF
TAMB = 25°C, CLK = 1.0 MHz
VCC = 5.0V (Note 1)
D010 ICC Read
D011 IDD write
Operating Current
mA
VCC = 5.5V; FCLK = 10.0 MHz
SO = Open
Write Current
VBAT Current
—
—
5
mA
nA
V
VCC = 5.5V
D012
D013
D014
IBAT
VTRIP
700
1.7
VBAT = 1.8V @ 25°C (Note 2)
1.5V typical at TAMB = 25°C
From VTRIP (max) to VTRIP (min)
From VTRIP (min) to VTRIP (max)
—
VBAT Change Over
VCC Fall Time
1.3
300
0
VCCFT
s
s
V
D015 VCCRT
VCC Rise Time
D016
D017
VBAT
ICCS
VBAT Voltage Range
Standby Current
1.3
—
5.5
1
A
—
Note 1: This parameter is periodically sampled and not 100% tested.
2: With oscillator running.
2011 Microchip Technology Inc.
Preliminary
DS22280A-page 3
MAS [ MICRO ANALOG SYSTEMS ]
