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LY61L2568MV 参数 Datasheet PDF下载

LY61L2568MV图片预览
型号: LY61L2568MV
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×8位高速CMOS SRAM [256K X 8 BIT HIGH SPEED CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 11 页 / 147 K
品牌: LYONTEK [ Lyontek Inc. ]
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®
LY61L2568
Rev. 0.4
256K X 8 BIT HIGH SPEED CMOS SRAM
GENERAL DESCRIPTION
The LY61L2568 is a 2,097,152-bit low power CMOS
static random access memory organized as 262,144
words by 8 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The LY61L2568 is well designed for very low power
system applications, and particularly well suited for
battery back-up nonvolatile memory application.
The LY61L2568 operates from a single power
supply of 3.3V and all inputs and outputs are fully
TTL compatible
FEATURES
Fast access time : 20/25ns
Very low power consumption:
Operating current(Normal version):
110/90mA(TYP.)
Operating current(20/25ns LL version):
40/35mA(TYP.)
Standby current(Normal version):
0.5mA(TYP.)
Standby current(20/25ns LL version):
10µA(TYP.)
Single 3.3V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data retention voltage : 2.0V (MIN.)
Green package available
Package : 44-pin 400 mil TSOP-II
PRODUCT FAMILY
Product
Family
LY61L2568
LY61L2568(LL)
Operating
Temperature
0 ~ 70℃
0 ~ 70℃
Vcc Range
3.0 ~ 3.6V
3.0 ~ 3.6V
Speed
20/25ns
20/25ns
Power Dissipation
Standby(I
SB1,
TYP.) Operating(Icc,TYP.)
0.5mA
110/90mA
10µA(LL)
40/35mA(LL)
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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