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LY61L12816AML-10T 参数 Datasheet PDF下载

LY61L12816AML-10T图片预览
型号: LY61L12816AML-10T
PDF下载: 下载PDF文件 查看货源
内容描述: [128K X 16 BIT HIGH SPEED CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 265 K
品牌: LYONTEK [ Lyontek Inc. ]
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®
LY61L12816A  
128K X 16 BIT HIGH SPEED CMOS SRAM  
Rev. 1.1  
PIN CONFIGURATION  
ABSOLUTE MAXIMUN RATINGS*  
PARAMETER  
SYMBOL  
VT1  
RATING  
UNIT  
V
Voltage on VCC relative to VSS  
Voltage on any other pin relative to VSS  
-0.5 to 4.6  
VT2  
-0.5 to VCC+0.5  
0 to 70(C grade)  
-40 to 85(I grade)  
-65 to 150  
V
Operating Temperature  
TA  
W
Storage Temperature  
Power Dissipation  
DC Output Current  
TSTG  
PD  
1
IOUT  
50  
mA  
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress  
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this  
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.  
TRUTH TABLE  
I/O OPERATION  
MODE  
Standby  
CE# OE# WE# LB# UB#  
SUPPLY CURRENT  
DQ0-DQ7  
High – Z  
High – Z  
High – Z  
DOUT  
DQ8-DQ15  
High – Z  
High – Z  
High – Z  
High – Z  
DOUT  
H
L
L
L
L
L
L
L
L
X
H
X
L
L
L
X
X
X
X
H
X
H
H
H
L
X
X
H
L
H
L
L
H
L
X
X
H
H
L
L
H
L
ISB,ISB1  
ICC,ICC1  
Output Disable  
Read  
High – Z  
DOUT  
ICC,ICC1  
DOUT  
DIN  
High – Z  
DIN  
High – Z  
DIN  
Write  
L
L
ICC,ICC1  
L
DIN  
Note: H = VIH, L = VIL, X = Don't care  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
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