®
LY61L12816A
128K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 1.1
GENERAL DESCRIPTION
FEATURES
The LY61L12816A is a 2,087,152-bit high speed
CMOS static random access memory organized as
131,072 words by 16 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
Fast access time : 8/10ns
Low power consumption:
Operating current:
50/40mA(TYP.)
Standby current:
2mA(TYP.)
Single 3.3V power supply
All inputs and outputs TTL compatible
Fully static operation
The LY61L12816A operates from a single power
supply of 3.3V and all inputs and outputs are fully
TTL compatible
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 1.5V (MIN.)
Green package available
Package : 44-pin 400 mil TSOP-II
PRODUCT FAMILY
Power Dissipation
Speed
Product
Family
Operating
Temperature
Vcc Range
Standby(ISB1,TYP.) Operating(ICC1,TYP.)
2.7 ~ 3.6V
3.0 ~ 3.6V
2.7 ~ 3.6V
3.0 ~ 3.6V
10ns
8ns
10ns
8ns
2mA
2mA
2mA
2mA
40mA
50mA
40mA
50mA
0 ~ 70℃
LY61L12816A
-40 ~ 85℃
LY61L12816A(I)
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
A0 - A16
DQ0 – D15
CE#
DESCRIPTION
Vcc
Vss
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
128Kx16
MEMORY ARRAY
A0-A16
DECODER
WE#
OE#
LB#
UB#
DQ0-DQ7
Lower Byte
VCC
I/O DATA
CIRCUIT
COLUMN I/O
DQ8-DQ15
Upper Byte
VSS
Ground
NC
No Connection
CE#
WE#
OE#
LB#
CONTROL
CIRCUIT
UB#
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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