LY61L102516A
1024K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 1.3
FEATURES
GENERAL DESCRIPTION
Fast access time : 10ns (VCC=3.3V)
15ns (VCC=1.8V)
Low power consumption:
Operating current:
The LY61L102516A is a 16M-bit high speed CMOS
static random access memory organized as 1024K
words by 16 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of operating
temperature.
70mA (3.3V TYP.)
50mA (1.8V TYP.)
Standby current : 4mA(TYP.)
Power supply: 1.8 or 3.3V
All inputs and outputs TTL compatible
Fully static operation
The LY61L102516A operates power supply either
1.8V or 3.3V, and all inputs and outputs are fully TTL
compatible.
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 1.5V (MIN.)
Green package available
Package : 54-pin 400mil TSOP II
48-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Speed
Power Dissipation
Product
Family
Operating
Temperature
Standby (ISB1, TYP.)
Operating (ICC1, TYP.)
VCC=1.65~2.4V VCC=2.7 ~3.6V
VCC=1.65~2.4V
VCC=2.7 ~3.6V VCC=1.65~2.4V
VCC=2.7 ~3.6V
0 ~ 70℃
LY61L102516A
15ns
15ns
10ns
10ns
4mA
4mA
4mA
4mA
50mA
50mA
70mA
-40 ~ 85℃
LY61L102516A(I)
70mA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Vcc
Vss
A0 - A19
DQ0 - DQ15 Data Inputs/Outputs
1024Kx16
A0-A19
DECODER
CE#, CE2
WE#
OE#
LB#
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
MEMORY ARRAY
UB#
VCC
DQ0-DQ7
Lower Byte
I/O DATA
CIRCUIT
VSS
Ground
COLUMN I/O
DQ8-DQ15
Upper Byte
NC
No Connection
CE#
CE2
WE#
OE#
LB#
CONTROL
CIRCUIT
UB#
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, lndustry E . Rd.II, Science-Based Industrial Park, Hsinchu 300, Taiwan
TEL: 886-3-6668838
FAX: 886-3-6668836
1
LYONTEK [ Lyontek Inc. ]
