LY61L102516A
1024K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 1.3
AC ELECTRICAL CHARACTERISTICS (VCC=2.7V~3.6V)
(1) READ CYCLE
LY61L102516A-10
LY61L102516A-12
PARAMETER
SYM.
UNIT
MIN.
MAX.
MIN.
MAX.
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read Cycle Time
tRC
tAA
10
-
-
-
10
10
4.5
-
12
-
-
-
12
12
5
-
Address Access Time
Chip Enable Access Time
tACE
tOE
tCLZ
tOLZ
tCHZ
tOHZ
tOH
tBA
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
LB#, UB# Access Time
-
-
*
*
2
0
-
-
2
-
3
0
-
-
2
-
-
-
*
*
4
4
-
4.5
4
5
5
-
5
5
-
LB#, UB# to High-Z Output
LB#, UB# to Low-Z Output
tBHZ
tBLZ
*
-
-
*
0
-
0
(2) WRITE CYCLE
PARAMETER
LY61L102516A-10
LY61L102516A-12
SYM.
tWC
tAW
tCW
tAS
UNIT
MIN.
10
8
MAX.
MIN.
12
10
10
0
MAX.
Write Cycle Time
-
-
-
-
-
-
-
-
-
4
-
-
-
-
-
-
-
-
-
-
5
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
8
0
8
0
6
0
2
-
Write Pulse Width
tWP
tWR
tDW
tDH
tOW
10
0
7
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
LB#, UB# Valid to End of Write
0
2
-
*
tWHZ
tBW
*
8
10
*These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, lndustry E . Rd.II, Science-Based Industrial Park, Hsinchu 300, Taiwan
TEL: 886-3-6668838
FAX: 886-3-6668836
6
LYONTEK [ Lyontek Inc. ]
