®
LY6125616
Rev. 2.4
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
GENERAL DESCRIPTION
The LY6125616 is a 4,194,304-bit low power CMOS
static random access memory organized as 262,144
words by 16 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The LY6125616 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY6125616 operates from a single power
supply of 5V and all inputs and outputs are fully TTL
compatible
FEATURES
Fast access time : 10/15/20/25ns
Low power consumption:
Operating current : 215/140/110/100mA(MAX.)
Standby current :
15mA(MAX. for 10ns)
3mA(MAX. for 15/20/25ns)
100µA( (MAX. for 15/20/25ns LL version)
Single 5V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 2.0V (MIN.)
Green package available
Package : 44-pin 400 mil TSOP-II
48-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Product
Family
LY6125616
LY6125616(I)
LY6125616
LY6125616(E)
LY6125616(I)
LY6125616(LL)
LY6125616(LLI)
Operating
Temperature
0 ~ 70℃
-40 ~ 85℃
0 ~ 70℃
-20 ~ 80℃
-40 ~ 85℃
0 ~ 70℃
-40 ~ 85℃
Vcc
Range
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
Speed
10ns
10ns
15/20/25ns
15/20/25ns
15/20/25ns
15/20/25ns
15/20/25ns
Power Dissipation
Standby(I
SB1
)
Operating(Icc)
15mA(MAX.)
215mA(MAX.)
15mA(MAX.)
215mA(MAX.)
3mA(MAX.) 140/110/100mA(MAX.)
3mA(MAX.) 140/110/100mA(MAX.)
3mA(MAX.) 140/110/100mA(MAX.)
100µA(MAX.) 140/110/100mA(MAX.)
100µA(MAX.) 140/110/100mA(MAX.)
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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