®
LY65W64
8K X 8 BIT HIGH SPEED CMOS SRAM
Rev. 1.1
FEATURES
GENERAL DESCRIPTION
The LY65W64 is a 65,536-bit high speed CMOS
static random access memory organized as 8,192
words by 8 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
Fast access time : 25ns
Low power consumption:
Operating current : 30mA (TYP.)
Standby current : 1μA (TYP.)
Single 3~5V power supply
All inputs and outputs TTL compatible
Fully static operation
The LY65W64 is well designed for high speed
system applications, and particularly well suited for
battery back-up nonvolatile memory application.
Tri-state output
Data retention voltage : 2.0V (MIN.)
Green package available
Package : 28-pin 300 mil SOJ
28-pin 8mm x 13.4mm STSOP
The LY65W64 operates from a single power
supply of 3~5V and all inputs and outputs are fully
TTL compatible
PRODUCT FAMILY
Power Dissipation
Speed
Product
Family
LY65W64(LL)
LY65W64(LLI)
Operating
Temperature
0 ~ 70℃
Vcc Range
Standby(ISB1,TYP.) Operating(Icc,TYP.)
3.0 ~ 5.5V
3.0 ~ 5.5V
25ns
25ns
1µA
1µA
30mA
30mA
-40 ~ 85℃
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
A0 - A12
Vcc
Vss
DQ0 – DQ7 Data Inputs/Outputs
CE#, CE2
WE#
OE#
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
8Kx8
MEMORY ARRAY
A0-A12
DECODER
VCC
VSS
Ground
NC
No Connection
I/O DATA
CIRCUIT
DQ0-DQ7
COLUMN I/O
CE#
CE2
WE#
OE#
CONTROL
CIRCUIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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