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A8D 参数 Datasheet PDF下载

A8D图片预览
型号: A8D
PDF下载: 下载PDF文件 查看货源
内容描述: 偏置电阻晶体管NPN硅表面贴装,带有单片偏置电阻网络晶体管 [BIAS RESISTOR TRANSISTOR, NPN SILICON SURFACE MOUNT TRANSISTOR WITH MONOLITHIC BIAS RESISTOR NETWORK]
分类和应用: 晶体晶体管
文件页数/大小: 11 页 / 133 K
品牌: LRC [ LESHAN RADIO COMPANY ]
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LESHAN RADIO COMPANY, LTD.
LMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
LMUN2233LT1
1
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
IC/IB = 10
hFE, DC CURRENT GAIN
75°C
25°C
TA = –25°C
1000
0.1
75°C
25°C
TA = –25°C
100
0.01
10
VCE = 10 V
1
2
7
12
17
22
27
32
1
10
IC, COLLECTOR CURRENT (mA)
100
IC, COLLECTOR CURRENT (mA)
0.001
Figure 27. VCE(sat) vs. IC
4
3.5
Cob, CAPACITANCE (pF)
3
2.5
2
1.5
1
0.5
0
0
10
20
30
40
50
60
VR, REVERSE BIAS VOLTAGE (VOLTS)
f = 1 MHz
IE = 0 A
TA = 25°C
100
IC, COLLECTOR CURRENT (mA)
75°C
Figure 28. DC Current Gain
TA = –25°C
10
1
0.1
25°C
0
2
4
6
VO = 5 V
8
0.01
Vin, INPUT VOLTAGE (VOLTS)
Figure 29. Output Capacitance
10
VO = 0.2 V
Vin, INPUT VOLTAGE (VOLTS)
Figure 30. Output Current vs. Input Voltage
TA = –25°C
25°C
1
75°C
0.1
0
12
18
6
24
IC, COLLECTOR CURRENT (mA)
30
Figure 31. Input Voltage vs. Output Current
LMUN2211S–9/11