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A8D 参数 Datasheet PDF下载

A8D图片预览
型号: A8D
PDF下载: 下载PDF文件 查看货源
内容描述: 偏置电阻晶体管NPN硅表面贴装,带有单片偏置电阻网络晶体管 [BIAS RESISTOR TRANSISTOR, NPN SILICON SURFACE MOUNT TRANSISTOR WITH MONOLITHIC BIAS RESISTOR NETWORK]
分类和应用: 晶体晶体管
文件页数/大小: 11 页 / 133 K
品牌: LRC [ LESHAN RADIO COMPANY ]
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LESHAN RADIO COMPANY, LTD.
LMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
LMUN2232LT1
1
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
IC/IB =10
hFE, DC CURRENT GAIN
TA = 75°C
100
–25°C
25°C
1000
VCE = 10 V
0.1
TA = 75°C
25°C
–25°C
0.01
10
0.001
4
8
12
16
20
24
28
IC, COLLECTOR CURRENT (mA)
1
0
25
50
75
100
125
IC, COLLECTOR CURRENT (mA)
Figure 22. VCE(sat) vs. IC
6
IC, COLLECTOR CURRENT (mA)
5
4
3
2
1
0
0
10
20
30
40
50
60
VR, REVERSE BIAS VOLTAGE (VOLTS)
f = 1 MHz
IE = 0 A
TA = 25°C
100
75°C
10
Figure 23. DC Current Gain
VO = 5 V
25°C
Cob, CAPACITANCE (pF)
1
TA = –25°C
0.1
0.01
0
2
4
6
8
Vin, INPUT VOLTAGE (VOLTS)
Figure 24. Output Capacitance
10
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = –25°C
75°C
1
25°C
Figure 25. Output Current vs. Input Voltage
0.1
0
10
20
IC, COLLECTOR CURRENT (mA)
30
Figure 26. Output Voltage vs. Input Current
LMUN2211S–8/11