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L9D125G80BG4M6 参数 Datasheet PDF下载

L9D125G80BG4M6图片预览
型号: L9D125G80BG4M6
PDF下载: 下载PDF文件 查看货源
内容描述: 2.5 GB, DDR - SDRAM集成模块 [2.5 Gb, DDR - SDRAM Integrated Module]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 45 页 / 6016 K
品牌: LOGIC [ LOGIC DEVICES INCORPORATED ]
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PreLIMINArY INforMAtIoN L9D125G80BG4  
2.5 Gb, DDR - SDRAM Integrated Module (IMOD)  
REGISTER DEFINITION  
Ac t iv e  
no oP e r a t io n (noP)  
The ACTIVE command is used to open (or activate) a row in a particular  
bank for a subsequent access. The value on the BA0, BA1 inputs selects  
the bank and the address provided on inputs A0-A12, selects the row. This  
row remains active (or opens) for accesses until a PRECHARGE command  
is issued to that bank. A PRECHARGE command must be issued before  
opening a different row in the same bank.  
The NO OPERATION command is used to perform a NOP to the selected  
DDR Silicon within the IMOD (CSx\=LOW). This prevents unwanted com-  
mands from being registered during idle or wait states. Operations already  
in progress are not affected.  
Lo a D mo D e re g is t e r  
The MODE REGISTER is loaded via inputs A0-A12. The LOAD MODE REG-  
ISTER command can only be issued when all banks idle and a subsequent  
t
executable command cannot be issued until MRD is met.  
ac t iv a t in g a sP e c iF ic ro w in a sP e c iF ic Ba n k  
CK#  
CK  
CKE HIGH  
CS#  
RAS#  
CA S#  
WE#  
Address  
Row  
Bank  
BA0, BA1  
Don’t Care  
LOGIC Devices Incorporated  
www.logicdevices.com  
High Performance, Integrated Memory Module Product  
13  
Feb 2, 2009 LDS-L9D125G80BG4-C