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LTC1624CS8 参数 Datasheet PDF下载

LTC1624CS8图片预览
型号: LTC1624CS8
PDF下载: 下载PDF文件 查看货源
内容描述: 高英法fi效率的SO-8 N沟道开关稳压器控制器 [High Efficiency SO-8 N-Channel Switching Regulator Controller]
分类和应用: 稳压器开关控制器
文件页数/大小: 28 页 / 493 K
品牌: Linear [ Linear ]
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LTC1624  
U
W U U  
APPLICATIONS INFORMATION  
what is limiting the efficiency and which change would  
producethemostimprovement. Percentefficiencycanbe  
expressed as:  
loss is thus reduced by the duty cycle.) For example, at  
50% DC, if RDS(ON) = 0.05, RL = 0.15and RSENSE  
=
0.05, then the effective total resistance is 0.2. This  
results in losses ranging from 2% to 8% for VOUT = 5V  
as the output current increases from 0.5A to 2A. I2R  
losses cause the efficiency to drop at high output  
currents.  
%Efficiency = 100% – (L1 + L2 + L3 + ...)  
whereL1, L2, etc. aretheindividuallossesasapercentage  
of input power.  
Although all dissipative elements in the circuit produce  
losses, four main sources usually account for most of the  
losses in LTC1624 circuits:  
3. Transition losses apply only to the topside MOSFET(s),  
andonlywhenoperatingathighinputvoltages(typically  
20V or greater). Transition losses can be estimated  
from:  
1. LTC1624 VIN current  
2. I2R losses  
Transition Loss = 2.5(VIN)1.85 (IMAX)(CRSS)(f)  
3. Topside MOSFET transition losses  
4. Voltage drop of the Schottky diode  
4. The Schottky diode is a major source of power loss at  
high currents and gets worse at high input voltages.  
The diode loss is calculated by multiplying the forward  
voltage drop times the diode duty cycle multiplied by  
the load current. For example, assuming a duty cycle of  
50% with a Schottky diode forward voltage drop of  
0.5V, the loss is a relatively constant 5%.  
1. The VIN current is the sum of the DC supply current IQ,  
given in the Electrical Characteristics table, and the  
MOSFET driver and control currents. The MOSFET  
driver current results from switching the gate  
capacitanceofthepowerMOSFET. EachtimeaMOSFET  
gate is switched from low to high to low again, a packet  
of charge dQ moves from INTVCC to ground. The  
resulting dQ/dt is a current out of VIN which is typically  
much larger than the control circuit current. In  
continuous mode, IGATECHG = f (QT + QB), where QT and  
QB are the gate charges of the topside and internal  
bottom side MOSFETs.  
As expected, the I2R losses and Schottky diode loss  
dominate at high load currents. Other losses including  
CIN and COUT ESR dissipative losses and inductor core  
lossesgenerallyaccountforlessthan2%totaladditional  
loss.  
Checking Transient Response  
By powering BOOST from an output-derived source  
(Figure 10 application), the additional VIN current  
resulting from the topside driver will be scaled by a  
factor of (Duty Cycle)/(Efficiency). For example, in a  
20V to 5V application, 5mA of INTVCC current results in  
approximately 1.5mA of VIN current. This reduces the  
midcurrent loss from 5% or more (if the driver was  
powered directly from VIN) to only a few percent.  
The regulator loop response can be checked by looking at  
the load transient response. Switching regulators take  
several cycles to respond to a step in DC (resistive) load  
current. Whenaloadstepoccurs, VOUT immediatelyshifts  
by an amount equal to (ILOAD • ESR), where ESR is the  
effective series resistance of COUT. ILOAD also begins to  
charge or discharge COUT which generates a feedback  
error signal. The regulator loop then acts to return VOUT to  
its steady-state value. During this recovery time VOUT can  
be monitored for overshoot or ringing that would indicate  
astabilityproblem. TheITH externalcomponentsshownin  
theFigure1circuitwillprovideadequatecompensationfor  
most applications.  
2. I2R losses are predicted from the DC resistances of the  
MOSFET, inductor and current shunt. In continuous  
mode the average output current flows through L but is  
“chopped” between the topside main MOSFET/current  
shunt and the Schottky diode. The resistances of the  
topside MOSFET and RSENSE multiplied by the duty  
cycle can simply be summed with the resistance of L to  
obtain I2R losses. (Power is dissipated in the sense  
resistor only when the topside MOSFET is on. The I2R  
Asecond, moreseveretransient, iscausedbyswitchingin  
loads with large (>1µF) supply bypass capacitors. The  
dischargedbypasscapacitorsareeffectivelyputinparallel  
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