PAD SERIES
PICO AMPERE DIODES
FEATURES
DIRECT REPLACEMENT FOR SILICONIX PAD SERIES
REVERSE BREAKDOWN VOLTAGE
REVERSE CAPACITANCE
ABSOLUTE MAXIMUM RATINGS
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (PAD)
Continuous Power Dissipation (J/SSTPAD)
Maximum Currents
Forward Current (PAD)
Forward Current (J/SSTPAD)
50mA
10mA
300mW
350mW
C
K
1
BV
R
≥ -30V
C
rss
≤ 2.0pF
PAD1,2,5
PAD50
-55 to +150 °C
-55 to +150 °C
JPAD
SSTPAD
SOT-23
TOP VIEW
1
3
A
K
C
2
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
BV
R
V
F
C
rss
CHARACTERISTIC
ALL PAD
Reverse Breakdown
Voltage
Forward Voltage
Total Reverse Capacitance
PAD1,5
All Others
ALL SSTPAD
ALL JPAD
MIN
-45
-30
-35
0.8
0.5
1.5
1.5
0.8
2
pF
V
I
R
= -1µA
I
F
= 5mA
V
R
= -5V,
f
= 1MHz
TYP
MAX
UNITS
CONDITIONS
SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
PAD1
PAD2
(SST/J)PAD5
(SST/J)PAD10
I
R
Maximum Reverse
Leakage Current
(SST/J)PAD20
(SST/J)PAD50
(SST/J)PAD100
(SST/J)PAD200
(SST/J)PAD500
1.
2.
Derate 2mW/°C above 25°C
Derate 2.8mW/°C above 25°C
PAD
-1
-2
-5
-10
-20
-50
-100
-5
-10
-20
-50
-100
-200
-500
-5
-10
-20
-50
pA
V
R
= -20V
JPAD
SSTPAD
UNITS
CONDITIONS
Linear Integrated Systems
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Doc 201142 11/01/12 Rev#A6 ECN# PAD SERIES
LINER [ LINEAR TECHNOLOGY ]
