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1735I 参数 Datasheet PDF下载

1735I图片预览
型号: 1735I
PDF下载: 下载PDF文件 查看货源
内容描述: 高效率同步降压型开关稳压器 [High Efficiency Synchronous Step-Down Switching Regulator]
分类和应用: 稳压器开关
文件页数/大小: 32 页 / 379 K
品牌: Linear [ Linear ]
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LTC1735  
U
W
U U  
APPLICATIO S I FOR ATIO  
The MOSFET power dissipations at maximum output  
current are given by:  
Ferrite designs have very low core loss and are preferred  
at high switching frequencies, so design goals can con-  
centrate on copper loss and preventing saturation. Ferrite  
core material saturates “hard,” which means that induc-  
tance collapses abruptly when the peak design current is  
exceeded. This results in an abrupt increase in inductor  
ripple current and consequent output voltage ripple. Do  
not allow the core to saturate!  
2
) (  
V
V
OUT  
P
=
I
1+δ R  
+
(
)
MAIN  
MAX  
DS(ON)  
IN  
2
k V  
I
C
f
(
) (  
)(  
)( )  
IN  
MAX RSS  
2
) (  
Molypermalloy (from Magnetics, Inc.) is a very good, low  
losscorematerialfortoroids,butitismoreexpensivethan  
ferrite. A reasonable compromise from the same manu-  
facturer is Kool Mµ. Toroids are very space efficient,  
especially when you can use several layers of wire. Be-  
cause they generally lack a bobbin, mounting is more  
difficult. However, designsforsurfacemountareavailable  
that do not increase the height significantly.  
V – V  
IN OUT  
P
=
I
(
1+δ R  
)
SYNC  
MAX  
DS(ON)  
V
IN  
where δ is the temperature dependency of RDS(ON) and k  
is a constant inversely related to the gate drive current.  
Both MOSFETs have I2R losses while the topside  
N-channel equation includes an additional term for transi-  
tion losses, which are highest at high input voltages. For  
VIN < 20V the high current efficiency generally improves  
with larger MOSFETs, while for VIN > 20V the transition  
losses rapidly increase to the point that the use of a higher  
RDS(ON) device with lower CRSS actually provides higher  
efficiency. The synchronous MOSFET losses are greatest  
at high input voltage or during a short-circuit when the  
duty cycle in this switch is nearly 100%.  
Power MOSFET and D1 Selection  
Two external power MOSFETs must be selected for use  
with the LTC1735: An N-channel MOSFET for the top  
(main) switch and an N-channel MOSFET for the bottom  
(synchronous) switch.  
The peak-to-peak gate drive levels are set by the INTVCC  
voltage. This voltage is typically 5.2V during start-up (see  
EXTVCC pinconnection).Consequently,logic-levelthresh-  
old MOSFETs must be used in most LTC1735 applica-  
tions. The only exception is when low input voltage is  
expected (VIN < 5V); then, sub-logic level threshold  
MOSFETs (VGS(TH) < 3V) should be used. Pay close  
attention to the BVDSS specification for the MOSFETs as  
well; many of the logic level MOSFETs are limited to 30V  
or less.  
The term (1 + δ) is generally given for a MOSFET in the  
form of a normalized RDS(ON) vs Temperature curve, but  
δ = 0.005/°C can be used as an approximation for low  
voltage MOSFETs. CRSS is usually specified in the  
MOSFET characteristics. The constant k = 1.7 can be  
used to estimate the contributions of the two terms in the  
main switch dissipation equation.  
TheSchottkydiodeD1showninFigure1conductsduringthe  
dead-timebetweentheconductionofthetwopowerMOSFETs.  
This prevents the body diode of the bottom MOSFET from  
turning on and storing charge during the dead-time, which  
could cost as much as 1% in efficiency. A 3A Schottky is  
generally a good size for 10A to 12A regulators due to the  
relatively small average current. Larger diodes can result in  
additionaltransitionlossesduetotheirlargerjunctioncapaci-  
tance. The diode may be omitted if the efficiency loss can be  
tolerated.  
SelectioncriteriaforthepowerMOSFETsincludetheON”  
resistance RDS(ON), reverse transfer capacitance CRSS  
,
input voltage and maximum output current. When the  
LTC1735 is operating in continuous mode the duty cycles  
for the top and bottom MOSFETs are given by:  
V
OUT  
Main SwitchDuty Cycle =  
V
IN  
V – V  
IN  
OUT  
Synchronous SwitchDuty Cycle =  
V
IN  
1735fc  
13