LT2078/LT 2079
TYPICAL PERFORMANCE CHARACTERISTICS
0.1Hz to 10Hz Noise
T
A
= 25°C
V
S
=
±2.5V
NOISE VOLTAGE (0.4µV/DIV)
CHANNEL A
NOISE VOLTAGE (0.4µV/DIV)
VOLTAGE NOISE DENSITY (nV/√Hz)
CURRENT NOISE DENSITY (fA/√Hz)
CHANNEL B
0
2
6
4
TIME (SEC)
10Hz Voltage Noise Distribution
35
15
OFFSET VOLTAGE CHANGE (µV)
30
10
5
0
–5
CHANGE IN OFFSET VOLTAGE (µV)
T
A
= 25°C
V
S
=
±2.5V
PERCENT OF UNITS
25
20
15
10
5
0
25
35
30
VOLTAGE NOISE DENSITY (nV/√Hz)
Minimum Supply Voltage
100
0
–100
–200
–300
–400
70°C
0°C
25°C
NONFUNCTIONAL
–55°C
V
–
= 0V
–0.1V
≤
V
CM
≤
0.4V
125°C
1000
INPUT OFFSET VOLTAGE (µV)
100
I
SINK
= 100µA
I
SINK
= 10µA
V
S
= 5V, 0V
OUTPUT VOLTAGE SWING (V)
SATURATION VOLTAGE (mV)
–500
0
2
3
1
POSITIVE SUPPLY VOLTAGE (V)
LT2078/79 • TPC10
6
U W
8
LT2078/79 • TPC04
LT2078/79 • TPC07
0.01Hz to 10Hz Noise
1000
T
A
= 25°C
V
S
=
±2.5V
Noise Spectrum
T
A
= 25°C
V
S
=
±2.5V
(AT V
S
=
±15V
VOLTAGE NOISE
IS 4% LESS
CURRENT NOISE
IS UNCHANGED)
300
CURRENT
NOISE
CHANNEL A
0.4µV
100
VOLTAGE
NOISE
30
1/f CORNER
0.7Hz
10
0.1
1
100
10
FREQUENCY (Hz)
1000
CHANNEL B
10
0
20
60
40
TIME (SEC)
80
100
LT2078/79 • TPC05
LT2078/79 • TPC06
Long Term Stability of Two
Representative Units (LT2078)
0.8
T
A
= 25°C, V
S
= 5V, 0V
V
CM
= 0.1V
1A
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
TIME (MONTHS)
4
5
Warm-Up Drift
T
A
= 25°C
V
S
=
±15V
WARM UP DRIFT
AT V
S
= 5V, 0V IS
IMMEASURABLY LOW
2B
1B
–10
–15
2A
LT2079
LT2078
40
0
1
2
3
LT2078/79 • TPC09
TIME AFTER POWER-ON (MINUTES)
LT2078/79 • TPC08
Output Saturation vs Temperature
vs Sink Current
V
+
I
SINK
= 2mA
I
SINK
= 1mA
Output Voltage Swing vs
Load Current
125°C
V
+
– 1
V
+
– 2
–55°C
25°C
10
I
SINK
= 1µA
NO LOAD
R
L
= 5k TO GND
V
–
+ 2
125°C
V
–
+ 1
25°C
1
–50 –25
0
25
50
75
TEMPERATURE (°C)
100
125
–55°C
V
–
0.1
1
10
0.01
SOURCING OR SINKING LOAD CURRENT (mA)
LT2078/79 • TPC11.5
LT2078/79 • TPC11
20789fa
LINEAR_DIMENSIONS [ LINEAR DIMENSIONS SEMICONDUCTOR ]
