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LT1158ISW 参数 Datasheet PDF下载

LT1158ISW图片预览
型号: LT1158ISW
PDF下载: 下载PDF文件 查看货源
内容描述: 半桥式N沟道功率MOSFET驱动器 [Half Bridge N-Channel Power MOSFET Driver]
分类和应用: 驱动器
文件页数/大小: 22 页 / 250 K
品牌: LINEAR_DIMENSIONS [ Linear Dimensions ]
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LT1158  
APPLICATIONS INFORMATION  
Notethatforthersteventonly,t  
isapproximately  
SENSE pin is within 1.2V of supply. Under these condi-  
tions the current is limited only by the R in series  
SHUTDOWN  
twice the above value since C is being discharged all  
EN  
DS(ON)  
the way from its quiescent voltage. Allowable values for  
R are from zero to 10k.  
F
with R  
. For a 5-lead MOSFET the current is limited  
SENSE  
DS(ON)  
by R  
alone, since R  
is not in the output path  
SENSE  
(see Figure 7). Again adjusting R  
the worst-case start currents are:  
for temperature,  
DS(ON)  
7.5V  
1.15V  
1.2V  
25μA  
7.5V  
ISTART  
=
=
3-Lead MOSFET  
5-Lead MOSFET  
allows inductive  
ENABLE  
1+ ∂ R  
)+ RSENSE  
(
(
)
DS ON  
(
+
C
EN  
1μF  
1.2V  
R
F
ISTART  
1k  
LT1158  
1+ ∂ R  
)
DS ON  
(
)
FAULT  
Properly sizing the MOSFET for I  
START  
loads with long time constants, such as motors with high  
mechanical inertia, to be started.  
OPTIONAL THERMOSTAT  
CLOSE ON RISE  
AIRPAX #67FXXX  
1158 F09  
Returning to the example used in Power MOSFET Selec-  
Figure 9. Self-Protection with Auto Restart  
tion, an IRFZ34 (R  
= 0.05Ω max) was selected for  
DS(ON)  
operationat5A.Iftheshort-circuitcurrentisalsosetat5A,  
what start current can be supported? From the equation  
t
becomes more difficult to analyze when the  
SHUTDOWN  
output is shorted with a PWM input. This is because the  
FAULT pin only conducts when fault currents are actually  
present in the MOSFET. FAULT does not conduct while the  
for R  
, a 0.03Ω shunt would be required, allowing  
SENSE  
the worst-case start current to be calculated:  
1.2V  
input is low in Figures 6 and 7 or during the interval I  
0 in Figure 8. Thus t  
the duty cycle of the current in the top MOSFET is low,  
maintaining the average MOSFET current at a relatively  
constant level.  
=
DS  
ISTART  
=
=10A  
will safely increase when  
1.7 0.05Ω+0.03Ω  
(
)
SHUTDOWN  
This calculation gives the minimum current which could  
be delivered with the IRFZ34 at T = 125°C without activat-  
J
ing the FAULT pin on the LT1158. If more start current is  
The length of time following shutdown before restart is  
attempted is given by:  
required, using an IRFZ44 (R  
= 0.028Ω max) would  
DS(ON)  
increase I  
to over 15A at T = 110°C, even though  
START  
J
the short-circuit current remains at 5A.  
1.5V  
25μA⎠  
tRESTART  
=
C = 6×104 C  
(
)
EN  
EN  
In order for the V sensing function to work properly, the  
DS  
supply pins for the LT1158 must be connected at the drain  
of the top MOSFET, which must be properly decoupled  
(see Ugly Transient Issues).  
In Figure 9, the top MOSFET would shut down after being  
in DC current limit for 0.9ms and try to restart at 60ms  
intervals, thus producing a duty cyle of 1.5% in short  
circuit. The resulting average top MOSFET dissipation  
during a short is easily measured by taking the product of  
the supply voltage and the average supply current.  
Driving Lamps  
Incandescent lamps represent a challenging load because  
they have much in common with a short circuit when cold.  
The top gate driver in the LT1158 can be configured to turn  
on large lamps while still protecting the power MOSFET  
Starting High In-Rush Current Loads  
TheLT1158hasaV sensingfunctionwhichallowsmore  
than I to flow in the top MOSFET providing that the  
DS  
SC  
1158fb  
15  
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