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LT1158ISW 参数 Datasheet PDF下载

LT1158ISW图片预览
型号: LT1158ISW
PDF下载: 下载PDF文件 查看货源
内容描述: 半桥式N沟道功率MOSFET驱动器 [Half Bridge N-Channel Power MOSFET Driver]
分类和应用: 驱动器
文件页数/大小: 22 页 / 250 K
品牌: LINEAR_DIMENSIONS [ Linear Dimensions ]
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LT1158  
APPLICATIONS INFORMATION  
Ugly Transient Issues  
regulators. Most step-down regulators use a high current  
Schottky diode to conduct the inductor current when the  
switch is off. The fractions of the oscillator period that the  
switch is on (switch conducting) and off (diode conduct-  
ing) are given by:  
In PWM applications the drain current of the top MOSFET  
is a square wave at the input frequency and duty cycle.  
To prevent large voltage transients at the top drain, a low  
ESR electrolytic capacitor must be used and returned to  
the power ground. The capacitor is generally in the range  
of 250μF to 5000μF and must be physically sized for  
the RMS current flowing in the drain to prevent heating  
and premature failure. In addition, the LT1158 requires a  
separate 10μF capacitor connected closely between pins  
2 and 7.  
VOUT  
SWITCHON=  
• TOTALPERIOD  
V
IN  
V VOUT  
IN  
SWITCHOFF=  
• TOTALPERIOD  
V
IN  
Note that for V > 2V , the switch is off longer than it  
IN  
OUT  
The LT1158 top source and sense pins are internally  
protected against transients below ground and above  
supply. However, the gate drive pins cannot be forced  
below ground. In most applications, negative transients  
coupled from the source to the gate of the top MOSFET  
do not cause any problems. However, in some high cur-  
rent (10A and above) motor control applications, negative  
transients on the top gate drive may cause early tripping  
of the current limit. A small Schottky diode (BAT85) from  
pin 15 to ground avoids this problem.  
is on, making the diode losses more significant than the  
switch. The worst case for the diode is during a short cir-  
cuit, when V  
approaches zero and the diode conducts  
OUT  
the short-circuit current almost continuosly.  
Figure 3 shows the LT1158 used to synchronously drive a  
pair of power MOSFETs in a step-down regulator applica-  
tion, where the top MOSFET is the switch and the bottom  
MOSFET replaces the Schottky diode. Since both conduc-  
tionpathshavelowlosses,thisapproachcanresultinvery  
high efficiency—from 90% to 95% in most applications.  
Switching Regulator Applications  
And for regulators under 5A, using low R  
N-channel  
DS(ON)  
MOSFETs eliminates the need for heatsinks.  
The LT1158 is ideal as a synchronous switch driver to  
improve the efficiency of step-down (buck) switching  
V
IN  
+
T GATE DR  
T GATE FB  
R
GS  
R
SENSE  
V
OUT  
T SOURCE  
+
LT1158  
+
SENSE  
SENSE  
FAULT  
REF  
PWM  
B GATE DR  
B GATE FB  
INPUT  
1158 F03  
Figure 3. Adding Synchronous Switching to a Step-Down Switching Regulator  
1158fb  
11