Specifications
ispLSI 2064V
Switching Test Conditions
Input Pulse Levels
Input Rise and Fall Time
10% to 90%
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
3-state levels are measured 0.5V from
steady-state active level.
GND to 3.0V
≤
1.5 ns
1.5V
1.5V
See Figure 2
Table 2-0003/2064V
Figure 2. Test Load
+ 3.3V
R1
Output Load Conditions (see Figure 2)
TEST CONDITION
A
B
Active High
Active Low
Active High to Z
at
V
OH
-0.5V
Active Low to Z
at
V
OL
+0.5V
R1
316Ω
∞
316Ω
∞
316Ω
R2
348Ω
348Ω
348Ω
348Ω
348Ω
CL
35pF
35pF
35pF
5pF
5pF
D
MIN.
–
2.4
–
–
–
–
–
–
–
*
CL includes Test Fixture and Probe Capacitance.
0213A/2064V
C
Table 2-0004/2064V
DC Electrical Characteristics
SYMBOL
PARAMETER
Output Low Voltage
Output High Voltage
Over Recommended Operating Conditions
E
FO
R
N
EW
CONDITION
06
V
OL
V
OH
I
IL
I
IH
I
IL-isp
I
IL-PU
I
OS
1
I
CC
2, 4
4V
I
OL
= 8 mA
I
OH
= -4 mA
0V
≤
V
IN
≤
V
IL
(Max.)
ES
IG
R2
C L
*
TYP.
–
–
–
–
–
–
–
–
82
3
MAX. UNITS
0.4
–
-10
10
50
-150
-150
-100
–
V
V
µA
µA
mA
µA
µA
mA
mA
Input or I/O Low Leakage Current
SI
2
Input or I/O High Leakage Current
ispEN Input Low Leakage Current
I/O Active Pull-Up Current
(V
CC
– 0.2)V
≤
V
IN
≤
V
CC
V
≤
V
IN
≤
5.25V
CC
0V
≤
V
IN
≤
V
IL
0V
≤
V
IN
≤
V
IL
V
CC
= 3.3V, V
OUT
= 0.5V
V
IL
= 0.0V, V
IH
= 3.0V
f
CLOCK
= 1 MHz
Output Short Circuit Current
Table 2-0007/2064V
1. One output at a time for a maximum duration of one second. V
OUT
= 0.5V was selected to avoid test
problems by tester ground degradation. Characterized but not 100% tested.
2. Measured using four 16-bit counters.
3. Typical values are at V
CC
= 3.3V and T
A
= 25°C.
4. Maximum I
CC
varies widely with specific device configuration and operating frequency. Refer to the Power Consumption
section of this data sheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to
estimate maximum I
CC
.
U
SE
is
Operating Power Supply Current
pL
4
N
Device
Output
S
Test
Point
LATTICE [ LATTICE SEMICONDUCTOR ]
