Specifications GAL22V10
Switching Test Conditions
GAL22V10D-4 Output Load Conditions (see figure below)
Input Pulse Levels
GND to 3.0V
1.5ns 10% – 90%
2.0ns 10% – 90%
1.5V
Input Rise and D-4/-5/-7
Test Condition
R1
CL
Fall Times
D-10/-15/-20/-25
A
50Ω
50Ω
50Ω
50Ω
50Ω
50pF
50pF
50pF
50pF
50pF
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
B
Z to Active High at 1.9V
1.5V
Z to Active Low at 1.0V
Active High to Z at 1.9V
Active Low to Z at 1.0V
See Figure
C
3-state levels are measured 0.5V from steady-state active
level.
+1.45V
Output Load Conditions (except D-4) (see figure below)
TEST POINT
R
1
Test Condition
R1
R2
CL
FROM OUTPUT (O/Q)
UNDER TEST
A
300Ω
∞
390Ω
390Ω
390Ω
390Ω
390Ω
50pF
50pF
50pF
5pF
Z0 = 50Ω, CL*
B
Active High
Active Low
Active High
Active Low
300Ω
∞
C
300Ω
5pF
+5V
R
1
FROM OUTPUT (O/Q)
UNDER TEST
TEST POINT
C L*
R
2
*CL INCLUDES TEST FIXTURE AND PROBE CAPACITANCE
12
LATTICE [ LATTICE SEMICONDUCTOR ]
