Specifications GAL22LV10
GAL22LV10D: SWITCHING TEST CONDITIONS
Input Pulse Levels
GND to 3.0V
1.5ns 10% – 90%
1.5V
Input Rise and Fall Times
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
+1.45V
1.5V
See Figure
TEST POINT
R
1
Output Load Conditions (see figure)
FROM OUTPUT (O/Q)
UNDER TEST
Z0 = 50Ω, CL = 35pF*
Test Condition
R1
CL
A
B
50Ω
50Ω
50Ω
50Ω
50Ω
35pF
35pF
35pF
35pF
35pF
*CL includes test fixture and probe capacitance.
High Z to Active High at 1.9V
High Z to Active Low at 1.0V
Active High to High Z at 1.9V
Active Low to High Z at 1.0V
C
GAL22LV10C: SWITCHING TEST CONDITIONS
+3.3V
Input Pulse Levels
GND to 3.0V
2.0ns 10% – 90%
1.5V
Input Rise and Fall Times
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
R
1
1.5V
See Figure
FROM OUTPUT (O/Q)
UNDER TEST
TEST POINT
3-state levels are measured 0.5V from steady-state active
level.
C L*
Output Load Conditions (see figure)
R
2
Test Condition
R1
R2
CL
A
B
316Ω
316Ω
316Ω
316Ω
316Ω
348Ω
348Ω
348Ω
348Ω
348Ω
35pF
35pF
35pF
5pF
Active High
Active Low
Active High
Active Low
*C L INCLUDES TEST FIXTURE AND PROBE CAPACITANCE
C
5pF
12
LATTICE [ LATTICE SEMICONDUCTOR ]
