Specifications ispLSI 2128E
Switching Test Conditions
Input Pulse Levels
GND to 3.0V
1.5 ns
Figure 2. Test Load
Input Rise and Fall Time 10% to 90%
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
1.5V
+ 5V
1.5V
See Figure 2
R
Table 2-0003/2128E
1
2
3-state levels are measured 0.5V from
steady-state active level.
Device
Output
Test
Point
Output Load Conditions (see Figure 2)
TEST CONDITION
R1
470Ω
∞
R2
CL
R
C *
L
A
B
390Ω
390Ω
390Ω
35pF
35pF
35pF
Active High
Active Low
470Ω
*
C includes Test Fixture and Probe Capacitance.
L
Active High to Z
at VOH -0.5V
∞
390Ω
5pF
0213A
C
Active Low to Z
at VOL +0.5V
470Ω
390Ω
5pF
Table 2 - 0004A/2000
DC Electrical Characteristics
Over Recommended Operating Conditions
SYMBOL
PARAMETER
Output Low Voltage
Output High Voltage
CONDITION
IOL = 8 mA
MIN.
–
TYP.3 MAX. UNITS
–
–
–
–
–
0.4
–
V
VOL
IOH = -4 mA
2.4
–
V
VOH
Input or I/O Low Leakage Current
0V ≤ VIN ≤ VIL (Max.)
-10
10
µA
µA
µA
µA
mA
mA
I
I
IL
(VCCIO - 0.2)V ≤ VIN ≤ VCCIO
–
Input or I/O High Leakage Current
IH
VCCIO ≤ VIN ≤ 5.25V
–
10
-10
–
-250
-240
–
I
I
IL-PU
OS1
0V ≤ VIN ≤ 2.0V
I/O Active Pull-Up Current
Output Short Circuit Current
–
–
VCCIO = 5.0V or 3.3V, VOUT = 0.5V
VIL = 0.0V, VIH = 3.0V
–
165
CC3,4
Operating Power Supply Current
I
fTOGGLE = 1 MHz
Table 2-0007/2128E
1. One output at a time for a maximum duration of one second. VOUT = 0.5V was selected to avoid test
problems by tester ground degradation. Characterized but not 100% tested.
2. Meaured using eight 16-bit counters.
3. Typical values are at VCC = 5V and TA = 25°C.
4. Unused inputs held at 0.0V.
5. Maximum ICC varies widely with specific device configuration and operating frequency. Refer to the
Power Consumption section of this data sheet and the Thermal Management section of the Lattice Semiconductor
Data Book or CD-ROM to estimate maximum ICC
.
4
LATTICE [ LATTICE SEMICONDUCTOR ]
