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2N5551 参数 Datasheet PDF下载

2N5551图片预览
型号: 2N5551
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN Silicon Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 223 K
品牌: KODENSHI [ KODENSHI KOREA CORP. ]
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2N5551
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Collector-Emitter saturation voltage
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE (1)
h
FE (2)
h
FE (3)
V
CE(sat)(1)
*
V
CE(sat)(2)
*
V
BE(sat)(1)
*
Test Condition
I
C
=100μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=120V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CE
=10V, I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
Min. Typ. Max.
180
160
6
-
-
80
80
30
-
-
-
-
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.5
1
1
400
6
250
-
-
-
100
100
Unit
V
V
V
nA
nA
-
-
-
V
V
V
V
MHz
pF
V
BE(sat)(2)
*
f
T
C
ob
*
: Pulse Tester : Pulse Width
≤300μs,
Duty Cycle
≤2.0%
KSD-T0A034-000
2