2N5551
NPN Silicon Transistor
Descriptions
•
General purpose amplifier
•
High voltage application
PIN Connection
C
Features
•
High collector breakdown voltage :
V
CBO
= 180V, V
CEO
= 160V
•
Low collector saturation voltage :
V
CE(sat)
=0.5V(MAX.)
•
Complementary pair with 2N5401
C
B
E
B
E
TO-92
Ordering Information
Type NO.
2N5551
Marking
2N5551
Package Code
TO-92
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
180
160
6
600
625
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
KSD-T0A034-000
1