KSMD5N50C / KSMU5N50C
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※Notes:
1. VGS = 0 V
2. ID = 250 μA
※
Notes :
1. V = 10 V
2. IDG=S 2 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
T, Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
5
4
3
2
1
0
2
10
Operation in This Area
is Limited by R DS(on)
10 µs
1
10
100 µs
1 ms
10 ms
100 ms
DC
0
10
-1
10
※
Notes :
1. TC = 25 o
C
2. T = 150 o
C
J
3. Single Pulse
-2
10
0
1
10
2
10
3
10
10
25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
℃
]
TC, Case Temperature [
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 9. Maximum Safe Operating Area
D = 0 .5
1 00
0 .2
0 .1
0 .0 5
※
N o tes
1 . Z θ JC (t)
2 . D uty F a cto r, D = t1/t2
:
℃
/W M ax .
=
2 .6
1 0-1
0 .0 2
3 . T JM
-
T C
=
P D
* Z θ JC (t)
M
0 .0 1
PDM
s in g le p u ls e
t1
t2
1 0-2
1 0-5
1 0-4
1 0-3
1 0-2
1 0-1
1 00
1 01
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
4
www.kersemi.com
2014-7-11
KERSEMI [ Kersemi Electronic Co., Ltd. ]
