KSMD5N50C / KSMU5N50C
Typical Characteristics
VGS
15.0V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Top :
101
101
Bottom: 5.0V
150oC
25oC
100
-55oC
100
※
Notes :
※
Notes :
-1
1. V = 40V
2. 250 s Pulse Test
10
μ
DS μ
1. 250 s Pulse Test
℃
2. TC = 25
-1
10
-1
0
10
101
2
4
6
8
10
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
4.5
1
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
VGS = 10V
0
10
VGS = 20V
℃
150
※
Notes :
℃
25
1. V = 0V
2. 250 s Pulse Test
※
℃
GS μ
Note: T = 25
J
-1
10
0
5
10
15
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
1200
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + C
gd
Crss = C
gd
1000
800
600
400
200
0
VDS = 100V
VDS = 250V
C
iss
VDS = 400V
C
oss
6
4
※
Notes ;
C
rss
1. VGS = 0 V
2. f = 1 MHz
2
※
Note: ID = 5A
0
-1
0
5
10
15
20
10
100
101
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
3
www.kersemi.com
2014-7-11
KERSEMI [ Kersemi Electronic Co., Ltd. ]
