IRFR/U9120N
20
16
12
8
800
600
400
200
0
I
D
= -4.0 A
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
V
V
V
=-80V
=-50V
=-20V
DS
DS
DS
C
= C + C
iss
gs
gd
gd ,
C
= C
rss
C
= C + C
gd
oss
ds
C
iss
C
C
oss
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
5
10
15
20
25
1
10
100
Q
, Total Gate Charge (nC)
G
-V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
°
T = 150 C
J
10
°
T = 25 C
100us
J
1ms
1
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.2
0.1
0.8
1.4
2.0
2.6
1
10
100
1000
-V
SD
,Source-to-Drain Voltage (V)
-V , Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4 / 10
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