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IRFU9120N 参数 Datasheet PDF下载

IRFU9120N图片预览
型号: IRFU9120N
PDF下载: 下载PDF文件 查看货源
内容描述: 超低导通电阻 [Ultra Low On-Resistance]
分类和应用:
文件页数/大小: 10 页 / 1940 K
品牌: KERSEMI [ Kersemi Electronic Co., Ltd. ]
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IRFR/U9120N  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
-100 ––– –––  
Conditions  
VGS = 0V, ID = -250µA  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA  
RDS(on)  
VGS(th)  
gfs  
Static Drain-to-Source On-Resistance ––– ––– 0.48  
V
S
VGS = -10V, ID = -3.9A „  
VDS = VGS, ID = -250µA  
VDS = -50V, ID = -4.0A†  
VDS = -100V, VGS = 0V  
VDS = -80V, VGS = 0V, TJ = 150°C  
VGS = 20V  
Gate Threshold Voltage  
-2.0 ––– -4.0  
1.4 ––– –––  
Forward Transconductance  
––– ––– -25  
––– ––– -250  
––– ––– 100  
––– ––– -100  
––– ––– 27  
––– ––– 5.0  
––– ––– 15  
IDSS  
Drain-to-Source Leakage Current  
µA  
nA  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Total Gate Charge  
IGSS  
VGS = -20V  
Qg  
ID = -4.0A  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
nC  
ns  
VDS = -80V  
VGS = -10V, See Fig. 6 and 13 „†  
VDD = -50V  
–––  
–––  
–––  
–––  
14 –––  
47 –––  
28 –––  
31 –––  
RiseTime  
ID = -4.0A  
td(off)  
tf  
Turn-Off Delay Time  
FallTime  
RG = 12 Ω  
RD =12 Ω, See Fig. 10 „†  
Between lead,  
D
LD  
LS  
Internal Drain Inductance  
Internal Source Inductance  
–––  
–––  
4.5 –––  
6mm (0.25in.)  
nH  
pF  
G
from package  
–––  
7.5  
and center of die contactꢀ  
VGS = 0V  
S
Ciss  
Coss  
Crss  
Input Capacitance  
––– 350 –––  
––– 110 –––  
Output Capacitance  
VDS = -25V  
Reverse Transfer Capacitance  
–––  
70 –––  
ƒ = 1.0MHz, See Fig. 5†  
Source-Drain Ratings and Characteristics  
Parameter  
Continuous Source Current  
(Body Diode)  
Min. Typ. Max. Units  
Conditions  
MOSFET symbol  
showing the  
D
IS  
-6.6  
––– –––  
A
G
ISM  
Pulsed Source Current  
(Body Diode)   
integral reverse  
––– ––– -26  
p-n junction diode.  
S
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
Forward Turn-On Time  
––– ––– -1.6  
––– 100 150  
––– 420 630  
V
TJ = 25°C, IS = -3.9A, VGS = 0V „  
TJ = 25°C, IF = -4.0A  
ns  
nC  
Qrr  
ton  
di/dt = 100A/µs „†  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
Notes:  
„ Pulse width 300µs; duty cycle 2%.  
 Repetitive rating; pulse width limited by  
max. junction temperature. ( See fig. 11 )  
This is applied for I-PAK, LS of D-PAK is measured between  
‚ Starting TJ = 25°C, L = 13mH  
RG = 25, IAS = -3.9A. (See Figure 12)  
ƒ ISD -4.0A, di/dt 300A/µs, VDD V(BR)DSS  
TJ 150°C  
lead and center of die contact  
† Uses IRF9520N data and test conditions.  
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2 / 10  
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