IRFR/U9120N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-100 ––– –––
Conditions
VGS = 0V, ID = -250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– ––– 0.48
Ω
V
S
VGS = -10V, ID = -3.9A
VDS = VGS, ID = -250µA
VDS = -50V, ID = -4.0A
VDS = -100V, VGS = 0V
VDS = -80V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate Threshold Voltage
-2.0 ––– -4.0
1.4 ––– –––
Forward Transconductance
––– ––– -25
––– ––– -250
––– ––– 100
––– ––– -100
––– ––– 27
––– ––– 5.0
––– ––– 15
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = -4.0A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC
ns
VDS = -80V
VGS = -10V, See Fig. 6 and 13
VDD = -50V
–––
–––
–––
–––
14 –––
47 –––
28 –––
31 –––
RiseTime
ID = -4.0A
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 12 Ω
RD =12 Ω, See Fig. 10
Between lead,
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5 –––
6mm (0.25in.)
nH
pF
G
from package
–––
7.5
and center of die contactꢀ
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 350 –––
––– 110 –––
Output Capacitance
VDS = -25V
Reverse Transfer Capacitance
–––
70 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
-6.6
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– -26
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– -1.6
––– 100 150
––– 420 630
V
TJ = 25°C, IS = -3.9A, VGS = 0V
TJ = 25°C, IF = -4.0A
ns
nC
Qrr
ton
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ꢀThis is applied for I-PAK, LS of D-PAK is measured between
Starting TJ = 25°C, L = 13mH
RG = 25Ω, IAS = -3.9A. (See Figure 12)
ISD ≤ -4.0A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
lead and center of die contact
Uses IRF9520N data and test conditions.
,
2 / 10
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