IRFR/U3710ZPbF & IRFU3710Z-701PbF
100000
10000
1000
100
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 33A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
rss
oss
gd
= C + C
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
ds
gd
C
C
iss
6.0
oss
rss
4.0
C
2.0
10
0.0
1
10
100
0
10 20 30 40 50 60 70 80
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
Q
G
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
1000.00
100.00
10.00
1.00
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
1msec
T
= 25°C
J
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
V
= 0V
GS
0.10
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
, Source-to-Drain Voltage (V)
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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