IRFR/U3710ZPbF & IRFU3710Z-701PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
100 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆
∆
V(BR)DSS/ TJ
Breakdown Voltage Temp. Coefficient ––– 0.088 ––– V/°C Reference to 25°C, ID = 1mA
Ω
m
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
15
–––
–––
–––
–––
–––
–––
69
18
4.0
V
GS = 10V, ID = 33A
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
39
–––
20
S
VDS = 25V, ID = 33A
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
µA
VDS = 100V, VGS = 0V
250
200
-200
100
–––
–––
–––
–––
–––
–––
–––
VDS = 100V, VGS = 0V, TJ = 125°C
nA VGS = 20V
GS = -20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
V
Qg
Qgs
Qgd
td(on)
tr
ID = 33A
nC VDS = 80V
VGS = 10V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
15
25
14
VDD = 50V
Rise Time
43
ID = 33A
td(off)
tf
Ω
Turn-Off Delay Time
53
ns RG = 6.8
VGS = 10V
Fall Time
42
LD
D
S
Internal Drain Inductance
4.5
Between lead,
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
VGS = 0V
DS = 25V
pF ƒ = 1.0MHz
Ciss
Input Capacitance
––– 2930 –––
Coss
Output Capacitance
–––
–––
290
180
–––
–––
V
Crss
Reverse Transfer Capacitance
Output Capacitance
Coss
––– 1200 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
Coss
Output Capacitance
–––
–––
180
430
–––
–––
Coss eff.
Effective Output Capacitance
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
I
Continuous Source Current
–––
–––
56
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
I
–––
–––
220
SM
S
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
35
1.3
53
62
V
T = 25°C, I = 33A, V = 0V
SD
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 33A, VDD = 50V
J F
rr
di/dt = 100A/µs
Q
t
41
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
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