IRFR/U3303PbF
1400
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= 18A
GS
C
= C + C
iss
gs
gd ,
V
V
= 24V
= 15V
DS
DS
C
= C
1200
1000
800
600
400
200
0
rss
gd
C
= C + C
gd
oss
ds
C
iss
C
oss
C
4
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
5
10
15
20
25
30
V
, Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 25 C
J
100
10
1
°
T = 150 C
J
10us
100us
1ms
°
T = 25 C
10ms
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
4.0
0.1
0.0
1
1.0
2.0
3.0
5.0
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
KERSEMI [ Kersemi Electronic Co., Ltd. ]
