IRFR/U3303PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.032 V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance 0.031
Ω
V
S
VGS = 10V, ID = 18A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 18A
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate Threshold Voltage
2.0
9.3
4.0
Forward Transconductance
25
250
100
-100
29
7.3
13
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 18A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 24V
VGS = 10V, See Fig. 6 and 13
11
99
16
28
VDD = 15V
ID = 18A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 13Ω
RD = 0.8Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
D
4.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
nH
pF
G
7.5
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
750
400
140
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
33ꢀ
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
120
1.3
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
V
TJ = 25°C, IS = 18A, VGS = 0V
TJ = 25°C, IF = 18A
53
80
ns
nC
Qrr
ton
94 140
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 590µH
RG = 25Ω, IAS = 18A. (See Figure 12)
ISD ≤ 18A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
ꢀ Caculated continuous current based on maximum allowable junction
temperature; Package limitation current = 20A.
,
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
KERSEMI [ Kersemi Electronic Co., Ltd. ]
