IRFR/U5305
2500
2000
C
iss
C
oss
1500
1000
-V
G S
, G ate -to-S ou rc e V oltage (V )
V
GS
C
iss
C
rs s
C
o ss
=
=
=
=
0V ,
f = 1MHz
C
g s
+ C
g d
, C
d s
S H O R TE D
C
gd
C
ds
+ C
g d
20
I
D
= -1 6A
V
D S
= -4 4V
V
D S
= -2 8V
16
C, C apacitanc e (pF )
12
8
C
rss
500
4
0
1
10
100
A
0
0
10
20
30
FO R TE S T C IR C U IT
S E E FIG U R E 1 3
40
50
60
A
-V
D S
, D rain-to-S ourc e V oltage (V )
Q
G
, Total G ate C harge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
-I
S D
, R everse Drain C urrent (A )
O P E R A TIO N IN TH IS A R E A L IM ITE D
B Y R
D S (o n)
-I
D
, D rain C urrent (A )
100
100
100µ s
T
J
= 17 5 °C
T
J
= 25 °C
10
1m s
10
0.4
0.8
1.2
1.6
V
G S
= 0V
A
1
1
T
C
= 25 °C
T
J
= 17 5°C
S ing le P u lse
10
10m s
2.0
100
A
-V
S D
, S ourc e-to-D rain V oltage (V )
-V
D S
, D rain-to-S ourc e V oltage (V )
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.kersemi.com
KERSEMI [ Kersemi Electronic Co., Ltd. ]
