IRFR/U5305
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-55
––– –––
V
V
GS
= 0V, I
D
= -250µA
––– -0.034 ––– V/°C Reference to 25°C, I
D
= -1mA
–––
––– 0.065
Ω
V
GS
= -10V, I
D
= -16A
-2.0
––– -4.0
V
V
DS
= V
GS
, I
D
= -250µA
8.0
––– –––
S
V
DS
= -25V, I
D
= -16A
–––
––– -25
V
DS
= -55V, V
GS
= 0V
µA
–––
––– -250
V
DS
= -44V, V
GS
= 0V, T
J
= 150°C
–––
––– 100
V
GS
= 20V
nA
–––
––– -100
V
GS
= -20V
–––
–––
63
I
D
= -16A
–––
–––
13
nC
V
DS
= -44V
–––
–––
29
V
GS
= -10V, See Fig. 6 and 13
–––
14
–––
V
DD
= -28V
–––
66
–––
I
D
= -16A
ns
–––
39
–––
R
G
= 6.8Ω
–––
63
–––
R
D
= 1.6Ω, See Fig. 10
D
Between lead,
4.5 –––
–––
6mm (0.25in.)
nH
G
from package
–––
7.5 –––
and center of die contact
S
––– 1200 –––
V
GS
= 0V
–––
520 –––
pF
V
DS
= -25V
–––
250 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
71
170
-31
A
-110
-1.3
110
250
V
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
S
T
J
= 25°C, I
S
= -16A, V
GS
= 0V
T
J
= 25°C, I
F
= -16A
di/dt = -100A/µs
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Pulse width
≤
300µs; duty cycle
≤
2%.
This is applied for I-PAK, L
S
of D-PAK is measured between
lead and center of die contact.
Uses IRF5305 data and test conditions.
V
DD
= -25V, starting T
J
= 25°C, L = 2.1mH
R
G
= 25Ω, I
AS
= -16A. (See Figure 12)
I
SD
≤
-16A, di/dt
≤
-280A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
2
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