AUIRFR4105
20
16
12
8
1200
1000
800
600
400
200
0
I = 16A
D
V
C
C
C
= 0V,
f = 1MHz
GS
iss
rss
oss
= C + C
,
C
SHORTED
V
V
= 44V
= 28V
gs
gd
gd
ds
DS
DS
= C
= C + C
C
ds
gd
iss
C
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
A
0
A
1
10
100
0
10
20
30
40
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10μs
T = 175°C
J
T = 25°C
J
100μs
1ms
T
T
= 25°C
= 175°C
C
J
V
GS
= 0V
Single Pulse
A
1
1
A
100
0.4
0.8
1.2
1.6
2.0
1
10
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
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KERSEMI [ Kersemi Electronic Co., Ltd. ]
