AUIRFR4105
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250μA
V(BR)DSS
V
Δ
Δ
V(BR)DSS/ TJ
Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
–––
–––
–––
–––
–––
–––
45
4.0
–––
25
VGS = 10V, ID = 16A
Ω
V
m
VDS = VGS, ID = 250μA
gfs
IDSS
Forward Transconductance
6.5
S
VDS = 25V, ID = 16A
Drain-to-Source Leakage Current
–––
–––
–––
–––
μA VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
nA VGS = 20V
250
100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– -100
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.0
49
34
6.8
14
ID = 16A
DS = 44V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
V
VGS = 10V, See Fig. 6 & 13
VDD = 28V
–––
–––
–––
–––
–––
ID = 16A
td(off)
tf
Turn-Off Delay Time
Fall Time
31
ns
RG = 18Ω
RD = 1.8Ω, See Fig. 10
Between lead,
40
LD
D
S
Internal Drain Inductance
4.5
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
VGS = 0V
VDS = 25V
Ciss
Coss
Crss
Input Capacitance
–––
–––
–––
700
240
100
–––
–––
–––
Output Capacitance
pF
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
I
Continuous Source Current
–––
–––
MOSFET symbol
27
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
–––
–––
100
SM
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
57
1.6
86
V
T = 25°C, I = 16A, V = 0V
SD
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 16A
J F
rr
di/dt = 100A/μs
Q
t
130
200
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
Pulse width ≤ 300μs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ꢀ Calculated continuous current based on maximum allowable
VDD = 25V, starting TJ = 25°C, L = 410μH
RG = 25Ω, IAS = 16A. (See Figure 12)
junction temperature; Package limitation current = 20A.
R is measured at Tj approximately 90°C.
θ
ISD ≤ 16A, di/dt ≤ 420A/μs, VDD ≤ V(BR)DSS
TJ ≤ 175°C.
,
2
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