IRFR/U3711Z
10000
12
10
8
V
= 0V,
f = 1 MHZ
GS
I
= 12A
D
V
= 18V
C
= C + C
,
C
SHORTED
DS
VDS= 10V
iss
gs gd
ds
C
= C
rss
gd
C
= C + C
oss
ds
gd
Ciss
1000
6
Coss
Crss
4
2
100
0
1
10
, Drain-to-Source Voltage (V)
100
0
10
20
30
40
V
Q
Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000.0
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100.0
10.0
1.0
T
= 175°C
J
100µsec
1msec
T
= 25°C
J
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
V
= 0V
GS
1
0.1
0.1
1.0
10.0
100.0
1000.0
0.0
0.5
1.0
1.5
2.0
2.5
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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